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The BLA1011S-200R,112 is a Silicon Lateral Diffused Metal Oxide Semiconductor (LDMOS) transistor manufactured by Ampleon USA Inc. Designed for avionics applications, this device operates in the 1030 to 1090 MHz frequency range. It features an N-channel enhancement mode configuration with a maximum power dissipation of 25 W and a maximum drain current of 2.2 A. The component supports a maximum operating temperature of 200 °C and utilizes a source-on-mounting-base topology to minimize common-mode inductance.
Verify the manufacturer designation as Ampleon USA Inc. or Philips Semiconductors/NXP Semiconductors based on the specific production era. Confirm the RoHS compliance status and package details against the official datasheet M3D381. Ensure the ordering suffix matches the required tape-and-reel packaging specifications.
Select this component for avionics systems requiring operation within the 1030 to 1090 MHz band. Consider the 25 W power dissipation limit and 200 °C maximum junction temperature when designing thermal management solutions. Evaluate the single-ended configuration and N-channel enhancement mode requirements against the system architecture.
This part belongs to the BLA1011 series of avionics LDMOS transistors. It supersedes earlier data sheets from October 2002, with the product specification dated November 19, 2003. The series is characterized by high power gain and ruggedness suitable for demanding aviation environments.
Consult official substitution guides for equivalent LDMOS devices from Ampleon or NXP. Verify pinout compatibility and electrical parameters such as power gain and frequency response before implementing any alternative components.