BLA6G1011L-200RG,1

Overview

The BLA6G1011L-200RG is a 200 W LDMOS power transistor designed for avionics applications operating between 1030 MHz and 1090 MHz. It utilizes an eared flanged ceramic package (SOT502D) with two mounting holes and two leads. The device operates at a supply voltage of 28 V, delivering 200 W output power with 20 dB gain and 65% drain efficiency under pulsed RF conditions. Key electrical parameters include a drain-source breakdown voltage of 65 V, a gate-source threshold voltage of 2.0 V typical, and a maximum junction temperature of 225 °C.

Feature Summary

• Internally matched for ease of use
• Enhanced ruggedness capable of withstanding VSWR = 10:1
• Integrated ESD protection
• Excellent thermal stability

Applications

• Avionics transmitter applications in the 1030 MHz to 1090 MHz frequency range

Procurement Notes

Verify the specific SOT502D package variant when sourcing replacements. Confirm RoHS compliance status against current manufacturing revisions. Ensure handling procedures strictly follow electrostatic discharge precautions as specified in industry standards. Validate that the application circuit design accommodates the required thermal management for the flanged ceramic package.

Selection Notes

Select this component for avionics systems requiring high power output within the 1030 MHz to 1090 MHz band. The internal matching simplifies circuit design compared to unmated devices. Consider the SOT502D package dimensions for mechanical integration. Verify that the load mismatch tolerance meets the system's operational requirements for enhanced ruggedness.

Part Context

This part belongs to the BLA6G1011 series, which includes variants like BLA6G1011-200R and BLA6G1011LS-200RG. These devices share similar electrical characteristics but differ in package configurations. The BLA6G1011L-200RG specifically features an eared flanged ceramic package suitable for robust mounting in avionics environments.

Replacement Considerations

BLA6G1011LS-200RG

FAQ

What is the maximum load mismatch the device can withstand?

The device is capable of withstanding a load mismatch corresponding to VSWR = 10:1 through all phases under specified pulsed RF conditions.

What is the typical gate-source threshold voltage?

The typical gate-source threshold voltage is 2.0 V, with a minimum of 1.4 V and a maximum of 2.4 V.

Does the device require external matching networks?

No, the device is internally matched for ease of use.