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The BLA8G1011LS-300GU is a 300 W LDMOS power transistor designed for avionics applications operating between 1030 MHz and 1090 MHz. It features an earless flanged ceramic package (SOT502E) with two leads. The device provides a typical drain efficiency of 56% and a power gain of 16.5 dB at 300 W output power, tested at 1060 MHz with a 32 V drain-source voltage. It includes integrated ESD protection and is internally matched for ease of use.
Verify the specific ordering suffix against official documentation to confirm the exact package variant. Ensure that the procurement channel sources components directly from authorized distributors or the manufacturer to guarantee authenticity. Confirm RoHS compliance status if required by the manufacturing environment.
Select this component for avionics systems requiring high power output within the specified UHF band. Evaluate the SOT502E package dimensions for mechanical fit and verify thermal management requirements based on the junction-to-case thermal impedance. Ensure the design accommodates the internal matching network characteristics provided in the datasheet.
This part belongs to the BLA8G1011L(S)-300(G) family of power LDMOS transistors manufactured by Ampleon. The 'LS' designation indicates an earless flanged ceramic package, while the 'G' suffix typically denotes RoHS-compliant versions. This series is engineered specifically for broadband operation in demanding avionics environments.
Consult the official Ampleon datasheet for confirmed substitute part numbers within the same product family. Verify compatibility regarding package outline, pin configuration, and electrical specifications before implementing any alternative components.