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The BLA9G1011LS-300U is a 300 W LDMOS power transistor designed for avionics applications operating between 1030 MHz and 1090 MHz. It features an earless flanged ceramic package (SOT502B) with two leads. Key electrical parameters include a drain-source voltage of 65 V, a gate-source threshold voltage ranging from 1.5 V to 2.5 V, and a drain-source on-state resistance of 43 mΩ. The device delivers a typical power gain of 19.5 dB and a drain efficiency of 60.5% at 300 W output power. It supports a maximum junction temperature of 225 °C.
Verify the specific ordering suffix against official documentation to confirm the package variant. The 'U' designation typically indicates tape and reel packaging, whereas datasheet tables list tray options like SOT502B. Confirm RoHS compliance status and ensure the component matches the required lead configuration before procurement.
Select this component for avionics systems requiring high power output within the 1030 MHz to 1090 MHz band. Ensure the design accommodates the SOT502B earless flanged ceramic package dimensions. Verify that the application circuit can handle the specified 65 V drain-source voltage and provides adequate thermal management for the 225 °C junction temperature limit.
This part belongs to the BLA9G1011L(S)-300 family of power LDMOS transistors manufactured by Ampleon. The family includes variants with different package configurations such as SOT502A, SOT502F, and SOT502E. All variants share similar electrical characteristics but differ in mechanical mounting features like ears or mounting holes.
Direct replacements within the same family include BLA9G1011L-300, BLA9G1011L-300G, and BLA9G1011LS-300G. These parts offer identical RF performance but utilize different package outlines (SOT502A, SOT502F, SOT502E). Verify mechanical fit and lead configuration compatibility before substitution.