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The BLA9H0912L-1200PU is a dual N-channel LDMOS power transistor designed for avionics applications in the 960 MHz to 1215 MHz frequency range. It delivers 1200 W output power with 19 dB gain and 60% drain efficiency at VDS = 50 V, IDq = 75 mA, tp = 50 μs, δ = 2%. The device features a 106 V drain-source breakdown voltage, 0.060 Ω on-state resistance, and operates up to +225 °C junction temperature. Packaged in SOT539A flanged ceramic with two mounting holes and four leads, it includes integrated dual-sided ESD protection.
Verify the specific ordering suffix against official Ampleon documentation to confirm package variant and compliance status. Confirm RoHS compliance details via the manufacturer's website as specified in the product data sheet. Ensure procurement channels are authorized to guarantee component authenticity and traceability.
Select this component for avionics systems requiring high power output within the 960 MHz to 1215 MHz band. Consider the SOT539A package dimensions and thermal impedance characteristics for heat sink design. Verify that the application circuit supports the required pulsed RF conditions and bias parameters for optimal performance.
This part belongs to the BLA9H0912L(S)-1200P series of LDMOS avionics power transistors manufactured by Ampleon. It is specifically engineered for robust performance in demanding avionics environments, offering high power density and reliability compared to standard RF transistors.
The BLA9H0912LS-1200P (SOT539B) is an earless flanged balanced ceramic package alternative within the same series. Verify mechanical fit and pin compatibility before substitution.