BLA9H0912L-250GU

BLA9H0912L-250GU

$175.64
  • Description:RF MOSFET LDMOS 50V CDFM2
  • Series:-

SKU:0a3d98ad2e6d Category: Brand:

  
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Product Detailed Parameters

  • Description:RF MOSFET LDMOS 50V CDFM2
  • Series:-
  • Mfr:Ampleon USA Inc.
  • Package:Tray
  • Technology:LDMOS
  • Frequency:960MHz ~ 1.215GHz
  • Gain:22dB
  • Voltage - Test:50 V
  • Current Rating (Amps):1.4µA
  • Noise Figure:-
  • Current - Test:100 mA
  • Power - Output:250W
  • Voltage - Rated:106 V
  • Grade:-
  • Qualification:-
  • Mounting Type:Chassis Mount
  • Package / Case:SOT-502A
  • Supplier Device Package:CDFM2
  • Configuration:-

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BLA9H0912L-250GU

Overview

The BLA9H0912L-250GU is a 250 W LDMOS power transistor designed for avionics applications in the 960 MHz to 1215 MHz frequency range. It utilizes an eared flanged ceramic package (SOT502F) with two leads and two mounting holes. The device operates at a drain-source voltage of 50 V, delivering 250 W output power with a typical gain of 22 dB and drain efficiency of 60%. Key electrical parameters include a breakdown voltage of 106 V, gate-source threshold voltage between 1.5 V and 2.5 V, and on-state resistance of 0.110 Ω. Maximum junction temperature reaches 225 °C.

Feature Summary

  • High efficiency and excellent ruggedness suitable for demanding environments
  • Designed specifically for avionics band operation
  • Excellent thermal stability and easy power control
  • Integrated dual-sided ESD protection enables excellent off-state isolation
  • Internally matched for ease of use

Applications

  • Avionics transmitter applications in the frequency range from 960 MHz to 1215 MHz

Procurement Notes

Verify the specific SOT502F package variant against design requirements. Confirm RoHS compliance status via official Ampleon channels. Ensure handling procedures meet ESD sensitivity standards, as the device requires precautions against electrostatic discharge during assembly and testing.

Selection Notes

Select this component for avionics systems requiring high power output within the specified UHF band. Evaluate thermal management capabilities to maintain junction temperatures below the maximum limit. Consider the internal matching and impedance characteristics for simplified circuit design compared to unmatched alternatives.

Part Context

This part belongs to the BLA9H0912L(S)-250(G) family of LDMOS avionics power transistors. Variants differ primarily by package style: SOT502A (flanged), SOT502B (earless flanged), SOT502E (earless flanged), and SOT502F (eared flanged). All share identical RF performance specifications.

Replacement Considerations

Direct replacements within the same family include BLA9H0912L-250G (SOT502F), BLA9H0912LS-250G (SOT502E), BLA9H0912L-250 (SOT502A), and BLA9H0912LS-250 (SOT502B). Verify mechanical footprint compatibility when substituting between eared and earless packages.

BLA9H0912L-250GUBLA9H0912L-250GU
$175.64
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