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The BLA9H0912L-250GU is a 250 W LDMOS power transistor designed for avionics applications in the 960 MHz to 1215 MHz frequency range. It utilizes an eared flanged ceramic package (SOT502F) with two leads and two mounting holes. The device operates at a drain-source voltage of 50 V, delivering 250 W output power with a typical gain of 22 dB and drain efficiency of 60%. Key electrical parameters include a breakdown voltage of 106 V, gate-source threshold voltage between 1.5 V and 2.5 V, and on-state resistance of 0.110 Ω. Maximum junction temperature reaches 225 °C.
Verify the specific SOT502F package variant against design requirements. Confirm RoHS compliance status via official Ampleon channels. Ensure handling procedures meet ESD sensitivity standards, as the device requires precautions against electrostatic discharge during assembly and testing.
Select this component for avionics systems requiring high power output within the specified UHF band. Evaluate thermal management capabilities to maintain junction temperatures below the maximum limit. Consider the internal matching and impedance characteristics for simplified circuit design compared to unmatched alternatives.
This part belongs to the BLA9H0912L(S)-250(G) family of LDMOS avionics power transistors. Variants differ primarily by package style: SOT502A (flanged), SOT502B (earless flanged), SOT502E (earless flanged), and SOT502F (eared flanged). All share identical RF performance specifications.
Direct replacements within the same family include BLA9H0912L-250G (SOT502F), BLA9H0912LS-250G (SOT502E), BLA9H0912L-250 (SOT502A), and BLA9H0912LS-250 (SOT502B). Verify mechanical footprint compatibility when substituting between eared and earless packages.