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The BLA9H0912L-700U is a 700 W LDMOS power transistor designed for avionics applications in the frequency range from 960 MHz to 1215 MHz. It operates with a drain-source voltage of 50 V and delivers a typical power gain of 20 dB at an output power of 700 W. The device features a flanged ceramic package (SOT502A) with two mounting holes and two leads. Key electrical characteristics include a drain-source breakdown voltage of 106 V, a gate-source threshold voltage ranging from 1.5 V to 2.5 V, and a maximum junction temperature of 225 °C. It exhibits excellent ruggedness, capable of withstanding a load mismatch corresponding to VSWR = 20:1 through all phases.
Verify the specific ordering suffix against the manufacturer's current documentation to ensure correct package configuration. Confirm RoHS compliance status via official product details before procurement. Ensure handling precautions for electrostatic sensitive devices are strictly followed during storage and installation.
Select this component for avionics transmitter designs requiring high power output within the specified frequency band. Consider the SOT502A package dimensions for mechanical integration. Evaluate thermal management requirements based on the transient thermal impedance data provided in the datasheet for the intended duty cycle and pulse width.
This part belongs to the BLA9H0912L(S)-700(G) family of power LDMOS transistors manufactured by Ampleon. The 'L' designation indicates a flanged ceramic package with two mounting holes and two leads, specifically the SOT502A outline. Other variants in the series offer different package configurations such as earless or eared options.
Direct replacements within the same family include BLA9H0912LS-700 (SOT502B), BLA9H0912L-700G (SOT502F), and BLA9H0912LS-700G (SOT502E). Verify pinout compatibility and mechanical mounting hole positions when substituting between these variants.