BLA9H0912LS-1200PU

BLA9H0912LS-1200PU

$403.37
  • Description:RF MOSFET LDMOS 50V SOT539A
  • Series:-

SKU:6589c8b3827a Category: Brand:

  
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Product Detailed Parameters

  • Description:RF MOSFET LDMOS 50V SOT539A
  • Series:-
  • Mfr:Ampleon USA Inc.
  • Package:Tray
  • Technology:LDMOS
  • Frequency:960MHz ~ 1.215GHz
  • Gain:19dB
  • Voltage - Test:50 V
  • Current Rating (Amps):2.8µA
  • Noise Figure:-
  • Current - Test:75 mA
  • Power - Output:1200W
  • Voltage - Rated:106 V
  • Grade:-
  • Qualification:-
  • Mounting Type:Chassis Mount
  • Package / Case:SOT-539A
  • Supplier Device Package:SOT539A
  • Configuration:-

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BLA9H0912LS-1200PU

Overview

The BLA9H0912LS-1200PU is a dual N-channel LDMOS power transistor designed for avionics applications in the 960 MHz to 1215 MHz frequency range. It delivers 1200 W output power with 19 dB gain and 60% drain efficiency at VDS = 50 V. The device features a maximum drain-source voltage of 106 V, gate-source voltage limits of -6 V to +11 V, and a junction temperature rating up to 225 °C. Packaged in the SOT539B earless flanged ceramic format, it integrates dual-sided ESD protection and internal matching for simplified circuit design.

Feature Summary

  • High efficiency and excellent thermal stability
  • Excellent ruggedness capable of withstanding VSWR = 20:1 load mismatch
  • Integrated dual-sided ESD protection for improved off-state isolation
  • Internally matched for ease of use and high flexibility with pulse formats

Applications

  • Avionics applications in the 960 MHz to 1215 MHz frequency range

Procurement Notes

Verify the specific ordering suffix against official Ampleon documentation to confirm package variant and compliance status. Ensure that procurement channels provide valid traceability and authenticity guarantees. Confirm RoHS compliance details directly from the manufacturer's product details page prior to finalizing acquisition orders.

Selection Notes

Select this component for avionics systems requiring high power output within the specified UHF band. Evaluate thermal management requirements based on the junction-to-mounting base thermal impedance characteristics. Ensure the application circuit supports the required pulsed RF conditions and bias parameters to achieve optimal performance metrics.

Part Context

This part belongs to the BLA9H0912L(S)-1200P series of LDMOS avionics power transistors. The LS variant specifically utilizes the SOT539B earless flanged balanced ceramic package, distinguishing it from the standard L version which uses the SOT539A package with mounting holes.

Replacement Considerations

The BLA9H0912L-1200P serves as a functional alternative within the same series, differing primarily in the SOT539A flanged package configuration compared to the earless SOT539B design.

BLA9H0912LS-1200PUBLA9H0912LS-1200PU
$403.37
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