BLC10G16XS-600AVTY

Overview

The BLC10G16XS-600AVTY is a dual N-channel LDMOS power transistor designed for base station applications in the 1427 MHz to 1518 MHz frequency range. It features an air cavity plastic earless flanged package (SOT1258-4) with six leads. The device provides 600 W output power with a typical drain efficiency of 49.7% and gain of 18.0 dB under 1-carrier W-CDMA test conditions at VDS = 32 V. Key electrical parameters include a drain-source breakdown voltage of 65 V, gate-source threshold voltage of 2.4 V, and thermal resistance from junction to case ranging from 0.17 K/W to 0.19 K/W depending on power levels.

Feature Summary

• Optimized for asymmetrical Doherty amplifier configurations with lower output capacitance
• Internally matched design simplifies circuit integration
• Low memory effects support effective digital pre-distortion
• Integrated ESD protection meets CDM Class 3 and HBM Class 2 standards

Applications

• RF power amplifiers for base stations
• Multi-carrier applications in the 1427 MHz to 1518 MHz band
• W-CDMA transmitter modules

Procurement Notes

Verify the specific ordering suffix against the manufacturer's current catalog to confirm packaging format. The 'Y' suffix typically indicates reel packaging, whereas 'T' denotes tray packaging. Confirm RoHS compliance status directly with the supplier or official documentation before procurement. Ensure handling procedures adhere to ESD sensitivity guidelines specified in the datasheet.

Selection Notes

Select this component for high-efficiency Doherty PA designs requiring operation within the 1427–1518 MHz spectrum. Evaluate thermal management requirements based on the junction-to-case thermal resistance values provided. Ensure the biasing network supports the specified quiescent currents for both main and peak devices. Verify impedance matching networks align with the recommended load-pull data for optimal power and efficiency performance.

Part Context

This part belongs to the BLC10G16XS series of asymmetric Doherty power transistors manufactured by Ampleon. It utilizes Laterally Diffused Metal-Oxide Semiconductor (LDMOS) technology housed in the SOT1258-4 package. The series is engineered specifically for cellular infrastructure, offering ruggedness against load mismatches up to 10:1 VSWR.

Replacement Considerations

Direct substitutes are not explicitly listed in the public datasheet. Designers should evaluate other Ampleon LDMOS transistors within the same frequency band and power class, ensuring pin compatibility and thermal characteristics match the existing layout constraints.