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The Ampleon BLC10G18XS-301AVTY is a dual N-channel LDMOS RF MOSFET transistor designed for high-power applications. It operates within the frequency range of 1.805 GHz to 1.88 GHz, delivering an output power of 300 W with a gain of 15.6 dB. The device features a drain-source breakdown voltage (Vds) of 65 V and on-resistances (Rds(on)) of 135 mOhms and 210 mOhms. It supports surface mount installation in an SOT1275-1-7 package and functions reliably between -40°C and +150°C.
Verify component authenticity through authorized Ampleon distributors or certified suppliers. Confirm RoHS compliance status and check for specific manufacturing date codes relevant to your supply chain requirements. Ensure proper ESD handling procedures are followed during storage and assembly due to the sensitivity of the semiconductor junctions.
Select this component when designing for 1.8–1.9 GHz bands requiring 300 W output. Compare Rds(on) values against thermal management capabilities. Ensure the PCB layout supports the SOT1275-1-7 footprint and matches the required impedance network for optimal gain and efficiency at the target operating frequency.
This part belongs to the Ampleon BLC10G18XS series of LDMOS transistors. These devices are engineered for robustness and linearity in demanding RF environments. The suffix AVTY indicates specific packaging and tape-and-reel configuration details defined by the manufacturer for automated assembly processes.
Direct substitutes include the BLC10G18XS-301AVTYZ variant, which shares identical electrical specifications and pinout. Verify that any alternative replacement maintains the same SOT1275-1-7 package dimensions and thermal characteristics to ensure mechanical compatibility.