BLC10G18XS-360AVTY

Overview

The BLC10G18XS-360AVTY is a 360 W LDMOS packaged asymmetric Doherty power transistor designed for base station applications in the 1805 MHz to 1880 MHz frequency range. It features dual N-channel technology with a drain-source breakdown voltage of 65 V and operates within a case temperature range of -40 °C to +125 °C. The device provides typical power gain of 17.0 dB, drain efficiency of 50.5%, and adjacent channel power ratio of -29.5 dBc under 1-carrier W-CDMA test conditions at VDS = 28 V. Packaged in an air cavity plastic earless flanged SOT1258-4 housing, it includes integrated ESD protection and internal matching.

Feature Summary

• Designed for low memory effects to provide excellent digital pre-distortion capability
• Lower output capacitance for improved performance in Doherty applications
• Internally matched for ease of use
• Integrated ESD protection

Applications

• RF power amplifiers for base stations
• Multi carrier applications in the 1805 MHz to 1880 MHz frequency range

Procurement Notes

Verify the specific ordering suffix against the manufacturer's current documentation to confirm packaging details such as reel specifications or tape-and-reel quantities. Ensure that the component meets RoHS compliance requirements relevant to the target market. Confirm thermal management solutions align with the specified junction-to-case thermal resistance values provided in the datasheet.

Selection Notes

Select this component for asymmetric Doherty amplifier designs requiring high efficiency and ruggedness in the 1805 MHz to 1880 MHz band. Consider the internal matching and low memory effects when designing digital pre-distortion algorithms. Verify impedance matching networks against the recommended load-pull data for both main and peak devices to optimize power gain and drain efficiency.

Part Context

This part belongs to Ampleon's LDMOS power transistor portfolio specifically engineered for wireless infrastructure. It utilizes advanced lateral diffusion metal-oxide semiconductor technology to deliver high power density and reliability. The device is optimized for modern base station architectures demanding high linearity and efficiency under complex modulation schemes.

Replacement Considerations

Consult official Ampleon substitution guides for verified equivalents. Cross-reference pinout configurations and thermal characteristics carefully when considering alternative components from other manufacturers.