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The BLC10G18XS-550AVTZ is a 550 W LDMOS asymmetric Doherty power transistor designed for base station applications in the 1805 MHz to 1880 MHz frequency range. It features a dual N-channel configuration with a drain-source breakdown voltage of 65 V and operates within a case temperature range of -40 °C to +125 °C. The device utilizes an SOT1258-4 air cavity plastic earless flanged package. Typical performance at Tcase = 25 °C includes a power gain of 16.5 dB, drain efficiency of 49.3%, and ACPR of -29.4 dBc under 1-carrier W-CDMA conditions.
Verify the specific ordering suffix against the manufacturer's current documentation to ensure correct packaging and handling specifications. Confirm RoHS compliance status and check for any regional distribution restrictions or availability updates prior to finalizing procurement plans.
Select this component for asymmetric Doherty amplifier designs requiring high ruggedness and efficiency in the 1805 MHz to 1880 MHz band. Ensure the design accommodates the specified thermal resistance and gate-source voltage limits to maintain reliability and optimal performance under peak load conditions.
This part belongs to the Ampleon BLC10G18XS series of RF MOSFET transistors. It is specifically engineered as a power LDMOS transistor for wireless infrastructure. The 'AVT' designation indicates the specific package variant and internal matching configuration suitable for production test circuits.
Public confirmed substitute part numbers are not available in the provided documentation.