BLC10G18XS-551AVY

BLC10G18XS-551AVY

$77.15
  • Description:RF MOSFET LDMOS 28V SOT1258-5
  • Series:-

SKU:cec86d55555c Category: Brand:

  
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Product Detailed Parameters

  • Description:RF MOSFET LDMOS 28V SOT1258-5
  • Series:-
  • Mfr:Ampleon USA Inc.
  • Package:Tape & Reel (TR)
  • Technology:LDMOS
  • Frequency:1.805GHz ~ 1.88GHz
  • Gain:16.1dB
  • Voltage - Test:28 V
  • Current Rating (Amps):2.8µA
  • Noise Figure:-
  • Current - Test:1.9 A
  • Power - Output:550W
  • Voltage - Rated:65 V
  • Grade:-
  • Qualification:-
  • Mounting Type:Surface Mount
  • Package / Case:SOT-1258-5
  • Supplier Device Package:SOT1258-5
  • Configuration:2 N-Channel (Dual) Common Source

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BLC10G18XS-551AVY

Overview

The BLC10G18XS-551AVY is an LDMOS RF MOSFET transistor manufactured by Ampleon USA Inc. It features a dual N-channel configuration in a SOT1258-4 package. The device operates within the frequency range of 1.805 GHz to 1.88 GHz, delivering an output power of 550 W with a gain of 16.1 dB. It utilizes a 28 V test voltage and exhibits a drain-source on-resistance of 62 mΩ and 108 mΩ. The component supports operating temperatures from -40°C to +125°C.

Feature Summary

  • Dual N-channel LDMOS technology for high-power RF applications
  • Optimized for asymmetric Doherty amplifier configurations
  • SMD/SMT compatible SOT1258-4 surface mount packaging

Applications

  • Base station power amplification
  • RF power amplifier modules
  • Asymmetric Doherty transmitter architectures

Procurement Notes

Verify the specific suffix AVY against official Ampleon documentation to confirm tape and reel packaging requirements. Ensure compatibility with existing PCB footprints for the SOT1258-4 package. Confirm RoHS3 compliance status through current manufacturer declarations before finalizing procurement orders.

Selection Notes

Select this component for base station applications requiring 550 W output at 1.8–1.9 GHz frequencies. The dual N-channel structure supports efficient Doherty operation. Evaluate thermal management capabilities given the 125°C maximum junction temperature rating and ensure drive circuitry matches the 16.1 dB gain specification.

Part Context

This part belongs to the BLC10G18XS series of LDMOS transistors designed for wireless infrastructure. It serves as a high-efficiency power switching element in modern cellular base stations. The series emphasizes robust performance in demanding RF environments while maintaining signal integrity across specified bandwidths.

Replacement Considerations

Consult official substitution lists for equivalents such as BLC10G18XS-551AVT or BLC10G18XS-551AVZ. Verify pinout and electrical parameter alignment before swapping components to ensure system stability.

BLC10G18XS-551AVYBLC10G18XS-551AVY
$77.15
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