BLC10G18XS-551AVZ

BLC10G18XS-551AVZ

  • Description:RF MOSFET LDMOS 32V SOT1258-4
  • Series:-

SKU:63e82c7d4bc8 Category: Brand:

ChipApex WhatsApp

Consult the customer manager about the wholesale price.

consultation hotline:86-132-6715-2157

email:[email protected]
Contact the product manager for consultation. One-stop consultation is available.


Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.

Submitting!
Submission successful!
Submission failed!
Email error!
Phone number error!

Product Detailed Parameters

  • Description:RF MOSFET LDMOS 32V SOT1258-4
  • Series:-
  • Mfr:Ampleon USA Inc.
  • Package:Tray
  • Technology:LDMOS
  • Frequency:1.805GHz ~ 1.88GHz
  • Gain:16.1dB
  • Voltage - Test:32 V
  • Current Rating (Amps):2.8µA
  • Noise Figure:-
  • Current - Test:750 mA
  • Power - Output:550W
  • Voltage - Rated:65 V
  • Grade:-
  • Qualification:-
  • Mounting Type:Surface Mount
  • Package / Case:SOT-1258-4
  • Supplier Device Package:SOT1258-4
  • Configuration:Dual, Common Source

Download product information

BLC10G18XS-551AVZ

Overview

The BLC10G18XS-551AVZ is a dual N-channel LDMOS RF power transistor manufactured by Ampleon. It is designed for base station applications operating within the frequency range of 1.805 GHz to 1.88 GHz. The device provides an output power of 550 W with a rated voltage of 65 V. Key electrical parameters include a drain-source on-resistance of 62 mΩ and 108 mΩ, and a gain of 16.1 dB. It operates between -40°C and +125°C and utilizes an SOT-1258-4 surface mount package.

Feature Summary

  • Dual N-channel LDMOS technology for high-power RF applications
  • Optimized for asymmetric Doherty amplifier configurations
  • Surface-mount SOT-1258-4 package design

Applications

  • Base station power amplification
  • Asymmetric Doherty amplifier circuits
  • RF power transistors in wireless communication infrastructure

Procurement Notes

Verify the specific suffix (e.g., AVZ vs AVTZ) against official Ampleon documentation to ensure correct packaging and tape-and-reel specifications. Confirm that the requested component matches the exact pinout and thermal characteristics defined in the datasheet for the SOT-1258-4 package. Cross-reference the manufacturer part number with authorized distributors to avoid counterfeit components. Ensure compatibility with existing board layouts and thermal management systems before procurement.

Selection Notes

Select this component for applications requiring 550 W output power at 1.8–1.9 GHz frequencies. Consider the dual N-channel structure for balanced performance in push-pull or Doherty topologies. Evaluate the 65 V breakdown voltage against system supply requirements. Assess the thermal resistance of the SOT-1258-4 package for adequate heat dissipation in the target enclosure design.

Part Context

This device belongs to Ampleon's portfolio of LDMOS power transistors engineered for cellular base stations. It is part of a series including variants like the BLC10G18XS-600AVT, which offers higher power ratings. These components are critical for modern telecommunications infrastructure, providing the necessary linearity and efficiency for wideband signal amplification.

Replacement Considerations

The BLC10G18XS-550AVTZ is a closely related variant with similar power and frequency specifications. Verify pin-to-pin compatibility and electrical parameter tolerances before substitution. Consult Ampleon's official cross-reference guides for approved replacements.

BLC10G18XS-551AVZBLC10G18XS-551AVZ

Click on the inquiry