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The BLC10G18XS-600AVTY is a dual N-channel LDMOS RF MOSFET transistor manufactured by Ampleon. It operates within the frequency range of 1.805 GHz to 1.88 GHz, delivering an output power of 600 W with a gain of 17.4 dB. The device features a drain-source breakdown voltage (Vds) of 65 V and on-resistances of 65.3 mOhms and 111 mOhms. It is housed in an SOT1258-4-7 surface-mount package and supports operating temperatures from -40°C to +125°C.
Verify component authenticity through authorized Ampleon distributors or certified suppliers. Confirm RoHS compliance status and check for specific moisture sensitivity levels prior to soldering. Ensure the ordering suffix matches the required packaging format, as variations may exist between reel and tray configurations.
Select this component for designs requiring 600 W output power at 1.8 GHz frequencies. Evaluate thermal management requirements given the 125°C maximum junction temperature limit. Compare on-resistance values against system efficiency targets and ensure the PCB layout accommodates the SOT1258-4-7 footprint dimensions.
This part belongs to the BLC10G series of high-power LDMOS transistors designed for wireless communication infrastructure. It shares architectural similarities with other models in the family but is distinctively tuned for the 1.8 GHz spectrum. The device represents Ampleon's focus on efficient RF power solutions for modern cellular networks.
Direct substitutes include the BLC10G18XS-600AVTZ, which offers identical electrical specifications but utilizes tray packaging instead of reel packaging. Verify pinout compatibility and thermal characteristics before implementing any cross-replacement.