BLC10G18XS-602AVTZ

Overview

The BLC10G18XS-602AVTZ is a dual N-channel LDMOS power transistor designed for base station applications in the 1805 MHz to 1880 MHz frequency range. It features an air cavity plastic earless flanged package (SOT1258-4) with six leads. The device supports a drain-source voltage of 65 V and operates within a case temperature range of -40 °C to +125 °C. Typical performance at Tcase = 25 °C includes a power gain of 16 dB, drain efficiency of 48.5%, and adjacent channel power ratio of -33.5 dBc under 1-carrier W-CDMA conditions.

Feature Summary

• Designed for low memory effects to provide excellent digital pre-distortion capability
• Features lower output capacitance to improve performance in Doherty applications
• Internally matched structure ensures ease of use during integration
• Integrated ESD protection enhances ruggedness and handling safety

Applications

• RF power amplifiers for base stations
• Multi-carrier applications in the 1805 MHz to 1880 MHz frequency range
• Asymmetrical Doherty amplifier designs

Procurement Notes

Verify the specific ordering suffix against official Ampleon documentation to confirm packaging format. The 'Z' suffix typically indicates tray packaging, while other suffixes may denote reel options. Confirm RoHS compliance status directly through manufacturer channels or authorized distributors prior to procurement.

Selection Notes

Select this component for high-efficiency asymmetric Doherty architectures requiring robust load mismatch tolerance. Ensure thermal management solutions maintain the case temperature within the specified operating limits. Verify impedance matching networks align with the provided load-pull data for optimal power gain and efficiency targets.

Part Context

This part belongs to the BLC10G18XS series of LDMOS transistors optimized for cellular infrastructure. It shares the SOT1258-4 package form factor with related models but differs in internal matching and electrical characteristics tailored for specific frequency bands and power levels within the GSM/UMTS spectrum.

Replacement Considerations

Direct replacements must match the SOT1258-4 package and pinout configuration. Evaluate alternative Ampleon devices such as the BLC10G18XS-552AVT for similar frequency ranges, ensuring that output power and impedance requirements are met without redesigning the surrounding RF circuitry.

FAQ

What is the maximum load mismatch the device can withstand?

The BLC10G18XS-602AVT can withstand a load mismatch corresponding to a VSWR of 10:1 through all phases under specified operating conditions.

How is the gate-source voltage defined for the main and peak amplifiers?

The limiting values specify the main amplifier gate-source voltage and peak amplifier gate-source voltage both range from -6 V to +9 V.

What ESD classification does the device hold?

The device holds a Charged Device Model (CDM) classification of C3 and a Human Body Model (HBM) classification of 2.