BLC10G19XS-551AVY

Overview

The BLC10G19XS-551AVY is a dual N-channel RF LDMOS transistor manufactured by Ampleon. It operates within the frequency range of 1.805 GHz to 1.88 GHz, targeting cellular base station applications. Key electrical parameters include a drain-source breakdown voltage (Vds) of 65 V and an on-resistance (Rds(on)) of 135 mΩ and 210 mΩ. The device delivers a typical output power of 300 W with a gain of 15.6 dB. It supports surface mount installation in an SOT127 package and functions reliably between -40°C and +150°C.

Feature Summary

• Dual N-channel LDMOS architecture for high-power RF amplification
• Optimized performance in the 1.8 GHz GSM/EDGE frequency band
• High thermal stability supporting operation up to +150°C

Applications

• Cellular base station power amplifiers
• GSM/EDGE infrastructure equipment
• RF power modules for telecommunications

Procurement Notes

Verify component authenticity through authorized Ampleon distributors or certified suppliers. Request original manufacturer datasheets and test reports to confirm specifications match the part number BLC10G19XS-551AVY. Ensure packaging integrity and RoHS compliance documentation are provided prior to purchase.

Selection Notes

Select this component for designs requiring 300 W output power at 1.8 GHz. Compare Rds(on) values of 135 mΩ and 210 mΩ against circuit requirements. Confirm SOT127 footprint compatibility and thermal management capabilities for the -40°C to +150°C operating range.

Part Context

This part belongs to the Ampleon BLC10G19XS series of RF LDMOS transistors. The series is engineered for high-efficiency power amplification in wireless communication infrastructure. The specific suffix indicates package and reel configuration details consistent with Ampleon's standard manufacturing practices.

Replacement Considerations

Consult official Ampleon substitution guides for verified equivalents. Cross-reference pinouts and electrical characteristics carefully before replacing.