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The BLC10G20LS-240PWT is a 240 W LDMOS power transistor designed for base station applications in the 1805 MHz to 1995 MHz frequency range. It features enhanced video bandwidth and operates with a drain-source voltage of 28 V and quiescent current of 1600 mA. Typical performance at Tcase = 25 °C includes a power gain of 19.3 dB, drain efficiency of 30%, and an adjacent channel power ratio (ACPR) of -32 dBc under 2-carrier W-CDMA conditions. The device has a maximum junction temperature of 225 °C and a thermal resistance from junction to case of 0.34 K/W.
Verify the specific ordering suffix against the manufacturer's official documentation to ensure correct package configuration. Confirm that the component meets RoHS compliance requirements as stated in the product data sheet. Ensure handling procedures adhere to electrostatic discharge sensitivity classifications C2A and HBM Class 2 to prevent damage during assembly.
Select this component for wideband RF power amplifier designs requiring high efficiency and low distortion. The internal matching network simplifies circuit design by reducing external component count. Verify thermal management capabilities to maintain junction temperatures below the 225 °C limit during continuous operation.
This part belongs to Ampleon's LDMOS power transistor portfolio, specifically engineered for cellular infrastructure. It utilizes a plastic earless flanged SOT1275-1 package suitable for surface mounting. The device is optimized for multi-carrier signals like W-CDMA, offering robust ruggedness against load mismatches up to 10:1 VSWR.
Consult the manufacturer's cross-reference guide for verified substitutes. Ensure any replacement maintains compatible pinout, thermal characteristics, and electrical specifications within the target frequency band.