BLC10G22XS-301AVTY

BLC10G22XS-301AVTY

$40.09
  • Description:RF MOSFET LDMOS 30V DFM6
  • Series:-

SKU:c4185d58e239 Category: Brand:

  
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Product Detailed Parameters

  • Description:RF MOSFET LDMOS 30V DFM6
  • Series:-
  • Mfr:Ampleon USA Inc.
  • Package:Tape & Reel (TR)
  • Technology:LDMOS
  • Frequency:2.11GHz ~ 2.17GHz
  • Gain:15dB
  • Voltage - Test:30 V
  • Current Rating (Amps):1.4µA
  • Noise Figure:-
  • Current - Test:1.1 A
  • Power - Output:300W
  • Voltage - Rated:65 V
  • Grade:-
  • Qualification:-
  • Mounting Type:Chassis Mount
  • Package / Case:SOT-1275-1
  • Supplier Device Package:DFM6
  • Configuration:2 N-Channel (Dual) Common Source

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BLC10G22XS-301AVTY

Overview

The BLC10G22XS-301AVTY is an RF LDMOS power transistor manufactured by Ampleon. It operates within the 1.805 GHz to 1.88 GHz frequency range, targeting cellular base station applications. Key electrical parameters include a drain-source breakdown voltage (Vds) of 65 V and a continuous drain current (Id) capability suitable for high-power amplification. The device delivers a typical output power of 300 W with a gain of approximately 15.6 dB at the specified operating conditions. It features a low on-resistance (Rds(on)) ranging from 135 mΩ to 210 mΩ, contributing to efficient power conversion. The component is housed in an SOT-1275-1-7 surface-mount package and supports operation across a temperature range of -40°C to +150°C.

Feature Summary

  • High-efficiency LDMOS technology optimized for linear RF power amplification
  • Robust thermal performance supporting high junction temperatures up to 150°C
  • Surface-mount design facilitating automated assembly in compact base station modules

Applications

  • Cellular base station power amplifiers
  • Broadband RF signal generation
  • Industrial heating and plasma generation systems

Procurement Notes

Verify the specific suffix AVTY against official Ampleon documentation to confirm packaging and tape-and-reel specifications. Ensure compatibility with existing PCB footprints for the SOT-1275-1-7 package. Cross-reference thermal resistance values with system-level heat sink designs to maintain safe operating areas under continuous wave conditions.

Selection Notes

Select this component for applications requiring high linearity and power density in the 1.8–1.9 GHz band. Compare Rds(on) variations between manufacturing lots to ensure consistent efficiency. Evaluate gate drive requirements against the device's input capacitance to optimize switching speeds and minimize distortion in linear amplifier modes.

Part Context

This part belongs to Ampleon’s BLC series of RF LDMOS transistors, designed for demanding wireless infrastructure. The XS variant typically denotes enhanced ruggedness or specific impedance matching characteristics compared to standard models. It serves as a critical active element in modern macro and micro cell site architectures.

Replacement Considerations

Direct substitutes may include other Ampleon parts within the BLC10G22XS family with differing suffixes indicating package or testing variations. Verify pinout compatibility before replacing with non-Ampleon equivalents, as internal biasing networks may differ.

BLC10G22XS-301AVTYBLC10G22XS-301AVTY
$40.09
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