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Product Detailed Parameters
- Description：RF MOSFET LDMOS 30V DFM6
- Series：-
- Mfr：Ampleon USA Inc.
- Package：Tape & Reel (TR)
- Technology：LDMOS
- Frequency：2.11GHz ~ 2.17GHz
- Gain：15dB
- Voltage - Test：30 V
- Current Rating (Amps)：1.4µA
- Noise Figure：-
- Current - Test：1.1 A
- Power - Output：300W
- Voltage - Rated：65 V
- Grade：-
- Qualification：-
- Mounting Type：Chassis Mount
- Package / Case：SOT-1275-1
- Supplier Device Package：DFM6
- Configuration：2 N-Channel (Dual) Common Source
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Overview
The BLC10G22XS-301AVTYZ is a dual N-channel LDMOS RF power transistor manufactured by Ampleon. Designed for high-efficiency radio frequency applications, it operates within the 2.11 GHz to 2.17 GHz frequency range. The device delivers a typical output power of 300 W with a gain of 15.4 dB at a drain voltage of 65 V. Key electrical parameters include a drain-source breakdown voltage (Vds) of 65 V and on-resistances of 57.4 mOhms and 111 mOhms. It supports a maximum operating temperature of +125 °C and is housed in an SOT1258-4-7 surface-mount package.
Feature Summary
- Dual N-channel LDMOS architecture for balanced RF performance
- Optimized for cellular base station power amplifier stages
- High thermal stability supporting operation up to +125 °C
Applications
- Cellular base station power amplification
- Broadband RF signal generation
- Industrial heating and plasma generation systems
Procurement Notes
Verify component authenticity through authorized Ampleon distributors or certified suppliers. Request original manufacturer datasheets and test reports to confirm electrical specifications match the BLC10G22XS-301AVTYZ designation. Ensure packaging integrity and RoHS compliance documentation are provided prior to acquisition.
Selection Notes
Select this component for designs requiring 300 W output power in the 2.11–2.17 GHz band. Compare Rds(on) values of 57.4 mOhms and 111 mOhms against circuit requirements for efficiency. Confirm compatibility with the SOT1258-4-7 footprint and thermal management capabilities for +125 °C operation.
Part Context
This part belongs to the BLC10G series of LDMOS transistors from Ampleon, engineered for robust RF power delivery. It shares architectural similarities with models like the BLC10G18XS-301AVTYZ but differs in frequency optimization and specific resistance characteristics tailored for higher frequency bands.
Replacement Considerations
Publicly confirmed substitute part numbers are not available in the verified source material. Consult Ampleon technical support for qualified alternatives if direct replacement is required.
