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The BLC10G22XS-301AVTZ is a 300 W LDMOS asymmetric Doherty power transistor designed for base station applications in the 2110 MHz to 2170 MHz frequency range. It features a dual N-channel configuration with a drain-source breakdown voltage of 65 V and operates within a case temperature range of -40 °C to +150 °C. The device utilizes an SOT1275-1 air cavity plastic earless flanged package. Typical performance at Tcase = 25 °C includes a power gain of 15 dB, drain efficiency of 47%, and ACPR of -30 dBc under 1-carrier W-CDMA conditions.
Verify the specific ordering suffix against official Ampleon documentation to confirm packaging details. Ensure that the procurement channel provides valid traceability and authenticity guarantees for RF semiconductor components. Confirm compliance with relevant environmental directives prior to finalizing acquisition.
Select this component for high-efficiency asymmetric Doherty amplifier designs operating between 2110 MHz and 2170 MHz. Evaluate thermal management requirements based on the specified junction-to-case thermal resistance characteristics. Ensure the application circuit supports the required gate-source voltage limits and quiescent current settings for optimal linearity.
This part belongs to the BLC10G series of LDMOS transistors manufactured by Ampleon. These devices are engineered specifically for cellular infrastructure, offering robust ruggedness and high efficiency. The product line targets modern multi-carrier base station architectures requiring precise linear amplification.
Consult official Ampleon substitution guides for verified equivalents. Cross-referencing requires matching package type, electrical ratings, and thermal characteristics to ensure functional compatibility without redesigning the host circuit.