BLC10G22XS-400AVTZ

Overview

The BLC10G22XS-400AVTZ is a 400 W LDMOS asymmetric Doherty power transistor designed for base station applications in the 2110 MHz to 2200 MHz frequency range. It features a drain-source breakdown voltage of 65 V and operates with a case temperature range from -40 °C to +125 °C. The device utilizes an SOT1258-4 air cavity plastic earless flanged package with six leads. Typical performance at Tcase = 25 °C, VDS = 28 V, and PL(AV) = 56 W yields a power gain of 17.0 dB, drain efficiency of 47.0%, and ACPR of -29.6 dBc using a 1-carrier W-CDMA test signal.

Feature Summary

• Designed for low memory effects to provide excellent digital pre-distortion capability
• Internally matched structure for ease of integration into amplifier designs
• Integrated ESD protection compliant with CDM Class 3 and HBM Class 2 standards
• Lower output capacitance optimized for improved performance in Doherty configurations

Applications

• RF power amplifiers for base stations
• Multi-carrier applications in the 2110 MHz to 2200 MHz frequency range
• Asymmetric Doherty power amplifier architectures

Procurement Notes

Verify the specific ordering suffix against the manufacturer's current catalog to confirm packaging variations such as tray or reel formats. Confirm RoHS compliance status via official product details before procurement. Ensure that the selected variant matches the required thermal management specifications for the intended application environment.

Selection Notes

Select this component for high-efficiency Doherty PA designs requiring robust ruggedness under load mismatch conditions up to VSWR 10:1. Evaluate thermal resistance characteristics relative to the expected case temperature operating point. Ensure gate drive voltages remain within the specified limits for both main and peak devices to maintain reliability.

Part Context

This part belongs to the BLC10G22XS series of LDMOS transistors manufactured by Ampleon. These components are engineered specifically for wireless infrastructure, offering high linearity and power density. The device integrates main and peak amplifier sections on a single substrate to facilitate compact Doherty implementation.

Replacement Considerations

Consult the official Ampleon replacement guide for verified substitute part numbers. Do not assume functional equivalence with other LDMOS families without verifying pinout compatibility and electrical parameter alignment.