BLC10G22XS-401AVTY

Overview

The BLC10G22XS-401AVT is a 400 W LDMOS asymmetric Doherty power transistor designed for base station applications in the 2110 MHz to 2200 MHz frequency range. It features dual N-channel architecture with main and peak amplifier sections housed in an SOT1275-1 air cavity plastic earless flanged package. The device operates at VDS = 30V, delivering typical drain efficiency of 49.3% and power gain of 15.4 dB under 1-carrier W-CDMA test conditions. Key electrical parameters include a drain-source breakdown voltage of 65 V, thermal resistance from junction to case ranging from 0.27 K/W to 0.29 K/W, and operating temperatures between -40 °C and +125 °C.

Feature Summary

• Designed for low memory effects to provide excellent digital pre-distortion capability
• Lower output capacitance improves performance specifically in Doherty applications
• Internally matched configuration ensures ease of use during integration
• Integrated ESD protection meets CDM Class 3 and HBM Class 2 standards

Applications

• RF power amplifiers for base stations
• Multi-carrier applications in the 2110 MHz to 2200 MHz frequency range
• Asymmetrical Doherty amplifier architectures

Procurement Notes

Verify component authenticity through authorized Ampleon distribution channels or certified partners. Confirm that the received units match the specific SOT1275-1 package outline and ordering suffix. Ensure handling procedures adhere to ESD sensitivity guidelines, as the device requires protection against electrostatic discharge during storage and assembly processes.

Selection Notes

Select this component when designing asymmetrical Doherty power amplifiers requiring high ruggedness and low thermal resistance. The internal matching simplifies circuit design, while the specific impedance values for main and peak devices facilitate optimal load-pull tuning. Ensure the application environment supports the specified case temperature limits and utilizes appropriate heat sinking to maintain junction temperature within safe operating areas.

Part Context

This part belongs to the BLC10G22XS series of LDMOS transistors optimized for cellular infrastructure. It complements other models in the lineup by offering specialized characteristics for asymmetric Doherty configurations. The device represents Ampleon's focus on high-efficiency RF solutions for modern wireless communication standards, particularly those requiring robust performance under high peak-to-average power ratios.

Replacement Considerations

Direct substitutes are not explicitly listed in the public datasheet. Engineers should evaluate alternative Ampleon LDMOS transistors with similar power levels, frequency ranges, and package types. Compatibility depends on verifying pinout alignment, impedance characteristics, and thermal management requirements before implementation.