BLC10G22XS-551AVTY

BLC10G22XS-551AVTY

$77.15
  • Description:RF MOSFET LDMOS 32V SOT1258-4
  • Series:-

SKU:f38d1d5db429 Category: Brand:

  
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Product Detailed Parameters

  • Description:RF MOSFET LDMOS 32V SOT1258-4
  • Series:-
  • Mfr:Ampleon USA Inc.
  • Package:Tape & Reel (TR)
  • Technology:LDMOS
  • Frequency:2.1GHz ~ 2.2GHz
  • Gain:16dB
  • Voltage - Test:32 V
  • Current Rating (Amps):2.8µA
  • Noise Figure:-
  • Current - Test:900 mA
  • Power - Output:650W
  • Voltage - Rated:65 V
  • Grade:-
  • Qualification:-
  • Mounting Type:Surface Mount
  • Package / Case:SOT-1258-4
  • Supplier Device Package:SOT1258-4
  • Configuration:2 N-Channel (Dual) Common Source

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BLC10G22XS-551AVTY

Overview

The BLC10G22XS-551AVTY is a dual N-channel LDMOS RF power transistor manufactured by Ampleon. It operates within the frequency range of 2.11 GHz to 2.2 GHz, delivering an output power of 550 W with a gain of 15.9 dB. The device features a drain-source breakdown voltage (Vds) of 65 V and utilizes the SOT1258-4 surface mount package. Designed for robust performance, it supports operating temperatures from -40°C to +125°C and is supplied in tape and reel packaging.

Feature Summary

  • Dual N-channel LDMOS architecture for high-power RF applications
  • Optimized for asymmetric Doherty amplifier configurations
  • Surface-mount SOT1258-4 package design

Applications

  • Base station power amplifiers
  • Asymmetric Doherty transmitter architectures
  • RF power generation at cellular frequencies

Procurement Notes

Verify the specific suffix 'AVTY' against official Ampleon documentation to confirm tape-and-reel packaging compatibility. Ensure that the target application circuit matches the 65 V drain bias requirements and thermal management specifications defined in the datasheet. Cross-reference the part number with authorized distributors to avoid counterfeit components.

Selection Notes

Select this component for base station designs requiring 550 W output power in the 2.1–2.2 GHz band. The dual-channel structure facilitates balanced push-pull or Doherty topologies. Evaluate thermal dissipation capabilities relative to the SOT1258-4 footprint and ensure gate drive voltages align with the specified threshold characteristics.

Part Context

This device belongs to the BLC10G22XS series of LDMOS transistors designed for telecommunications infrastructure. It complements other variants like the BLC10G22XS-600AVT, offering slightly lower output power but maintaining high efficiency. The series targets modern cellular base stations requiring linear amplification and robust thermal stability.

Replacement Considerations

The BLC10G22XS-600AVT serves as a higher-power alternative within the same family. Verify pinout compatibility and thermal resistance differences when substituting. Ensure that the system's cooling capacity supports the specific power dissipation profile of the replacement device.

BLC10G22XS-551AVTYBLC10G22XS-551AVTY
$77.15
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