BLC10G22XS-602AVTZ

Overview

The BLC10G22XS-602AVTZ is a 600 W LDMOS asymmetric Doherty power transistor designed for base station applications in the 2110 MHz to 2170 MHz frequency range. It features a dual N-channel architecture with a drain-source breakdown voltage of 65 V and an internal gate-source threshold voltage typically at 2.0 V. The device operates within a case temperature range of -40 °C to +125 °C and utilizes an SOT1258-4 air cavity plastic earless flanged package. Typical performance metrics include a power gain of 15.4 dB, a drain efficiency of 47.5%, and an adjacent channel power ratio of -32.5 dBc under standard test conditions.

Feature Summary

• Designed for low memory effects to provide excellent digital pre-distortion capability
• Features lower output capacitance to improve performance specifically in Doherty applications
• Internally matched structure facilitates ease of use during circuit integration
• Includes integrated ESD protection compliant with CDM Class 3 and HBM Class 2 standards

Applications

• RF power amplifiers for base stations operating in the 2110 MHz to 2170 MHz band
• Multi-carrier applications utilizing asymmetrical Doherty architectures
• Amplification systems requiring high ruggedness against load mismatches up to 10:1 VSWR

Procurement Notes

Verify the specific ordering suffix 'Z' against official Ampleon documentation to confirm packaging variations, such as tray versus reel configurations. Ensure that design-in processes account for the device's sensitivity to electrostatic discharge by adhering to ANSI/ESD S20.20 or equivalent handling standards. Confirm RoHS compliance status directly through manufacturer resources prior to final procurement decisions.

Selection Notes

Select this component when designing asymmetrical Doherty power amplifiers for cellular base stations requiring high linearity and efficiency. The internal matching network simplifies impedance matching requirements compared to discrete alternatives. Evaluate thermal management capabilities carefully, as the junction-to-case thermal resistance varies significantly between 0.14 K/W and 0.16 K/W depending on the specific power load conditions during operation.

Part Context

This part belongs to the BLC10 series of power LDMOS transistors manufactured by Ampleon. The series targets wireless communication infrastructure, specifically focusing on base station power amplification. The device integrates both main and peak amplifier sections into a single package to support complex modulation schemes like W-CDMA with high peak-to-average ratios.

Replacement Considerations

Publicly confirmed substitute part numbers are not available in the provided source material. Designers should consult Ampleon technical support for validated cross-references or updated product family recommendations.