BLC10G22XS-603AVTY

BLC10G22XS-603AVTY

$57.54
  • Description:RF MOSFET LDMOS 30V SOT1258-4
  • Series:-

SKU:22ef75542087 Category: Brand:

  
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Product Detailed Parameters

  • Description:RF MOSFET LDMOS 30V SOT1258-4
  • Series:-
  • Mfr:Ampleon USA Inc.
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • Technology:LDMOS
  • Frequency:2.11GHz ~ 2.17GHz
  • Gain:15.4dB
  • Voltage - Test:30 V
  • Current Rating (Amps):2.8µA
  • Noise Figure:-
  • Current - Test:1.2 A
  • Power - Output:600W
  • Voltage - Rated:65 V
  • Grade:-
  • Qualification:-
  • Mounting Type:Surface Mount
  • Package / Case:SOT-1258-4
  • Supplier Device Package:SOT1258-4
  • Configuration:Dual, Common Source

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BLC10G22XS-603AVTY

Overview

The BLC10G22XS-603AVT is a 600 W LDMOS asymmetric Doherty power transistor designed for base station applications in the 2110 MHz to 2170 MHz frequency range. It features a drain-source breakdown voltage of 65 V and operates with a case temperature range from -40 °C to +125 °C. The device utilizes an air cavity plastic earless flanged package (SOT1258-4) with six leads. Typical performance at Tcase = 25 °C includes a power gain of 15.4 dB, drain efficiency of 47.5%, and adjacent channel power ratio of -32.5 dBc under 1-carrier W-CDMA test conditions.

Feature Summary

  • Designed for low memory effects and minimum quiescent current drift to support digital pre-distortion
  • Lower output capacitance optimized for improved performance in Doherty amplifier configurations
  • Internally matched structure integrated with ESD protection for simplified circuit implementation

Applications

  • RF power amplifiers for base stations
  • Multi-carrier applications in the 2110 MHz to 2170 MHz frequency range

Procurement Notes

Verify component authenticity by checking the manufacturer's marking against official datasheet specifications. Confirm the package type matches the SOT1258-4 outline and validate the ordering suffix corresponds to the intended reel or tray configuration. Ensure handling procedures comply with CDM Class 3 and HBM Class 2 electrostatic discharge sensitivity ratings during assembly.

Selection Notes

Select this component for high-power asymmetric Doherty architectures requiring operation within the 2110 MHz to 2170 MHz band. Evaluate thermal resistance characteristics relative to the specific heat sink design to maintain junction temperatures within the +125 °C limit. Consider the internal matching network when designing input and output impedance circuits for optimal gain and efficiency.

Part Context

This part belongs to Ampleon's LDMOS power transistor portfolio targeting wireless infrastructure. It serves as a specialized solution for modern base station power amplifiers, specifically engineered to handle high peak-to-average power ratios associated with wideband code division multiple access signals while maintaining linearity and efficiency.

Replacement Considerations

Consult official Ampleon documentation for verified substitute part numbers. Do not assume functional equivalence with other models based on similar naming conventions without cross-referencing electrical parameters and pin configurations.

BLC10G22XS-603AVTYBLC10G22XS-603AVTY
$57.54
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