BLC10G22XS-603AVTZ

$72.05

Description：RF MOSFET LDMOS 30V SOT1258-4
Series：-

SKU:9a2a045b3870 Category: RF FETs, MOSFETs Brand: Ampleon USA Inc.

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Product introduction

Product Detailed Parameters

Description：RF MOSFET LDMOS 30V SOT1258-4
Series：-
Mfr：Ampleon USA Inc.
Package：Tray
Technology：LDMOS
Frequency：2.11GHz ~ 2.17GHz
Gain：15.4dB
Voltage - Test：30 V
Current Rating (Amps)：2.8µA
Noise Figure：-
Current - Test：2.2 A
Power - Output：687W
Voltage - Rated：65 V
Grade：-
Qualification：-
Mounting Type：Surface Mount
Package / Case：SOT-1258-4
Supplier Device Package：SOT1258-4
Configuration：2 N-Channel (Dual) Common Source

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BLC10G22XS-603AVTZ

Overview

The BLC10G22XS-603AVTZ is a dual N-channel LDMOS RF power transistor designed for base station applications. It operates within the frequency range of 2.11 GHz to 2.17 GHz, delivering an output power of 600 W with a gain of 15 dB. The device features a drain-source breakdown voltage (Vds) of 65 V and a typical on-resistance (Rds(on)) of 58.4 mOhms per channel. Packaged in SOT1258-4-7, it supports surface mount installation and functions reliably between -40°C and +125°C.

Feature Summary

Asymmetric Doherty architecture optimized for high efficiency in base station transmitters
Dual N-channel configuration providing balanced power handling capabilities
LDMOS technology ensuring robust performance at cellular communication frequencies

Applications

Base station power amplification
Cellular infrastructure transmitters
RF power modules requiring high linearity

Procurement Notes

Verify component authenticity through authorized Ampleon distributors or certified suppliers. Confirm package integrity and pin alignment against SOT1258 specifications. Request original datasheets and test reports to validate electrical parameters before integration into production systems.

Selection Notes

Select this component for applications demanding 600 W output power in the 2110–2170 MHz band. Ensure thermal management solutions support the specified operating temperature range. Compare Rds(on) values against system efficiency requirements to confirm suitability for asymmetric Doherty configurations.

Part Context

This part belongs to the BLC10G22XS series of LDMOS transistors from Ampleon. It is engineered specifically for modern cellular base stations, offering high power density and linearity. The device complements lower-power variants in the same family by providing substantial output capability for macro cell deployments.

Replacement Considerations

Direct substitutes include BLC10G22XS-600AVTZ. Verify pinout compatibility and thermal characteristics when cross-referencing with other high-power LDMOS devices from different manufacturers.

How to buy

Online and offline orders are supported. If the item is available for online purchase, you can place it in the cart; for wholesale pricing, please contact our product manager for a quote.

Payment Method

Payment methods: T/T, WeChat Pay, credit cards, Google Pay, Apple Pay . Buyer covers shipping, fees, duties, and taxes; contact our product manager if you need a contract/procurement process.

Delivery time

In-stock items usually ship within 24 hours. Otherwise, shipment is arranged 1 to 2 days after the items arrive at our warehouse. Timing depends on destination and shipping method.

Freight calculation

Freight cost depends on destination, package size, and weight . We offer shipping options via DHL, FedEx, UPS, and TNT , and can ship using your freight account upon request.

Mode of Transportation

We ship via DHL, FedEx, UPS, and TNT. If you prefer a specific logistics provider, we can ship using your designated carrier.

Return and Refund

Returns are accepted within 60 days of invoice with RMA approval. Items must be resalable; original invoice and test report are required. No returns for customer errors.