BLC10G27LS-320AVTZ

BLC10G27LS-320AVTZ

$71.17
  • Description:RF MOSFET LDMOS 28V SOT1258-1
  • Series:-

SKU:aff2a097533e Category: Brand:

  
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Product Detailed Parameters

  • Description:RF MOSFET LDMOS 28V SOT1258-1
  • Series:-
  • Mfr:Ampleon USA Inc.
  • Package:Tray
  • Technology:LDMOS
  • Frequency:2.5GHz ~ 2.7GHz
  • Gain:16dB
  • Voltage - Test:28 V
  • Current Rating (Amps):2.8µA
  • Noise Figure:-
  • Current - Test:400 mA
  • Power - Output:320W
  • Voltage - Rated:65 V
  • Grade:-
  • Qualification:-
  • Mounting Type:Chassis Mount
  • Package / Case:SOT1258-1
  • Supplier Device Package:SOT1258-1
  • Configuration:-

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BLC10G27LS-320AVTZ

Overview

The BLC10G27LS-320AVTZ is a 320 W LDMOS asymmetrical Doherty power transistor designed for base station applications in the 2500 MHz to 2700 MHz frequency range. It features a drain-source voltage of 65 V, a junction temperature rating up to 225 °C, and a thermal resistance from junction to case of 0.24 K/W. The device operates with a typical power gain of 15.4 dB and drain efficiency of 42% at 50 W output power under 1-carrier W-CDMA conditions. Packaged in an SOT1258-1 air cavity plastic earless flanged package, it includes integrated ESD protection and video decoupling leads.

Feature Summary

  • Designed for low memory effects to provide excellent pre-distortability
  • Features lower output capacitance for improved performance in Doherty applications
  • Includes decoupling leads to enable improved video bandwidth
  • Internally matched for ease of use

Applications

  • RF power amplifier for W-CDMA base stations
  • Multi carrier applications in the 2500 MHz to 2700 MHz frequency range

Procurement Notes

Verify the specific ordering suffix against the manufacturer's current documentation to confirm packaging details. Ensure that the component meets RoHS compliance requirements as specified in the product data sheet. Confirm availability through authorized Ampleon distribution channels prior to finalizing procurement plans.

Selection Notes

Select this component for high-efficiency asymmetrical Doherty amplifier designs operating between 2500 MHz and 2700 MHz. Consider its ruggedness capabilities, which support load mismatches up to 10:1 VSWR. Evaluate the thermal management requirements based on the 0.24 K/W junction-to-case thermal resistance specification.

Part Context

This part belongs to the BLC10G series of power LDMOS transistors manufactured by Ampleon. It is specifically engineered for wireless communication infrastructure, offering a balance of high power output and linearity suitable for modern cellular network deployments.

Replacement Considerations

Consult official Ampleon substitution guides for verified replacements. Do not assume compatibility with other LDMOS families without verifying pinout, impedance matching, and electrical specifications.

BLC10G27LS-320AVTZBLC10G27LS-320AVTZ
$71.17
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