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The BLC10G27LS-320AVTZ is a 320 W LDMOS asymmetrical Doherty power transistor designed for base station applications in the 2500 MHz to 2700 MHz frequency range. It features a drain-source voltage of 65 V, a junction temperature rating up to 225 °C, and a thermal resistance from junction to case of 0.24 K/W. The device operates with a typical power gain of 15.4 dB and drain efficiency of 42% at 50 W output power under 1-carrier W-CDMA conditions. Packaged in an SOT1258-1 air cavity plastic earless flanged package, it includes integrated ESD protection and video decoupling leads.
Verify the specific ordering suffix against the manufacturer's current documentation to confirm packaging details. Ensure that the component meets RoHS compliance requirements as specified in the product data sheet. Confirm availability through authorized Ampleon distribution channels prior to finalizing procurement plans.
Select this component for high-efficiency asymmetrical Doherty amplifier designs operating between 2500 MHz and 2700 MHz. Consider its ruggedness capabilities, which support load mismatches up to 10:1 VSWR. Evaluate the thermal management requirements based on the 0.24 K/W junction-to-case thermal resistance specification.
This part belongs to the BLC10G series of power LDMOS transistors manufactured by Ampleon. It is specifically engineered for wireless communication infrastructure, offering a balance of high power output and linearity suitable for modern cellular network deployments.
Consult official Ampleon substitution guides for verified replacements. Do not assume compatibility with other LDMOS families without verifying pinout, impedance matching, and electrical specifications.