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The BLC10G27XS-400AVTZ is a 400 W LDMOS packaged asymmetric Doherty power transistor designed for base station applications at frequencies from 2496 MHz to 2690 MHz. It features excellent ruggedness, high efficiency, and low thermal resistance. The device includes integrated ESD protection and is internally matched for ease of use. Typical drain efficiency reaches 46.2% with a power gain of 14.7 dB under 1-carrier W-CDMA test conditions. It operates within a case temperature range of -40 °C to +125 °C and withstands junction temperatures up to 225 °C.
Verify component authenticity by cross-referencing the manufacturer's official datasheet documentation. Confirm that the ordering suffix corresponds to the specific package variant required for the design. Ensure compliance with RoHS directives as specified in the product details. Validate handling procedures against CDM Class 3 and HBM Class 2 ratings to prevent electrostatic discharge damage during assembly.
Select this component for asymmetric Doherty amplifier architectures requiring high linearity and efficiency in the 2.5 GHz band. Evaluate thermal management requirements based on the junction-to-case thermal resistance values provided in the datasheet. Consider the internal matching network which simplifies input and output impedance design compared to unmatched devices.
This part belongs to Ampleon's portfolio of RF power transistors utilizing LDMOS technology. It is specifically engineered for modern cellular infrastructure, supporting standards such as W-CDMA and LTE. The device integrates main and peak amplifier sections within a single air cavity plastic earless flanged package to facilitate compact module designs.
Consult the official Ampleon replacement guide or contact the manufacturer directly for verified substitute part numbers. Do not assume functional equivalence with other models without reviewing specific electrical parameter overlaps and pinout compatibility.