BLC10G27XS-400AVTZ

BLC10G27XS-400AVTZ

$79.69
  • Description:RF MOSFET LDMOS 28V SOT1258-4
  • Series:BLC

SKU:68b819d0904f Category: Brand:

  
  • Quantity
    • -
    • +
  •    
ChipApex WhatsApp

Consult the customer manager about the wholesale price.

consultation hotline:86-132-6715-2157

email:[email protected]
Contact the product manager for consultation. One-stop consultation is available.


Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.

Submitting!
Submission successful!
Submission failed!
Email error!
Phone number error!

Product Detailed Parameters

  • Description:RF MOSFET LDMOS 28V SOT1258-4
  • Series:BLC
  • Mfr:Ampleon USA Inc.
  • Package:Tray
  • Technology:LDMOS
  • Frequency:2.496GHz ~ 2.69GHz
  • Gain:13.3dB
  • Voltage - Test:28 V
  • Current Rating (Amps):2.8µA
  • Noise Figure:-
  • Current - Test:750 mA
  • Power - Output:400W
  • Voltage - Rated:65 V
  • Grade:-
  • Qualification:-
  • Mounting Type:Surface Mount
  • Package / Case:SOT-1258-4
  • Supplier Device Package:SOT1258-4
  • Configuration:Dual, Common Source

Download product information

BLC10G27XS-400AVTZ

Overview

The BLC10G27XS-400AVTZ is a 400 W LDMOS packaged asymmetric Doherty power transistor designed for base station applications at frequencies from 2496 MHz to 2690 MHz. It features excellent ruggedness, high efficiency, and low thermal resistance. The device includes integrated ESD protection and is internally matched for ease of use. Typical drain efficiency reaches 46.2% with a power gain of 14.7 dB under 1-carrier W-CDMA test conditions. It operates within a case temperature range of -40 °C to +125 °C and withstands junction temperatures up to 225 °C.

Feature Summary

  • Designed for low memory effects providing excellent digital pre-distortion capability
  • Lower output capacitance for improved performance in Doherty applications
  • Excellent ruggedness capable of withstanding VSWR = 10:1 through all phases

Applications

  • RF power amplifiers for base stations
  • Multi carrier applications in the 2496 MHz to 2690 MHz frequency range

Procurement Notes

Verify component authenticity by cross-referencing the manufacturer's official datasheet documentation. Confirm that the ordering suffix corresponds to the specific package variant required for the design. Ensure compliance with RoHS directives as specified in the product details. Validate handling procedures against CDM Class 3 and HBM Class 2 ratings to prevent electrostatic discharge damage during assembly.

Selection Notes

Select this component for asymmetric Doherty amplifier architectures requiring high linearity and efficiency in the 2.5 GHz band. Evaluate thermal management requirements based on the junction-to-case thermal resistance values provided in the datasheet. Consider the internal matching network which simplifies input and output impedance design compared to unmatched devices.

Part Context

This part belongs to Ampleon's portfolio of RF power transistors utilizing LDMOS technology. It is specifically engineered for modern cellular infrastructure, supporting standards such as W-CDMA and LTE. The device integrates main and peak amplifier sections within a single air cavity plastic earless flanged package to facilitate compact module designs.

Replacement Considerations

Consult the official Ampleon replacement guide or contact the manufacturer directly for verified substitute part numbers. Do not assume functional equivalence with other models without reviewing specific electrical parameter overlaps and pinout compatibility.

BLC10G27XS-400AVTZBLC10G27XS-400AVTZ
$79.69
Buy Now