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The BLC10M6XS200 is a 200 W LDMOS power transistor designed for RF lighting applications in the 425 MHz to 450 MHz ISM band. It operates with a drain-source voltage of 65 V and features an internally matched input for simplified circuit design. The device utilizes a SOT1270-1 air cavity plastic earless flanged package, providing excellent thermal resistance through its copper flange. Typical performance at 440 MHz includes 200 W output power, 21 dB gain, and 80% drain efficiency under continuous wave conditions.
Verify the specific ordering suffix against the manufacturer's current catalog to ensure correct packaging and compliance status. Confirm that the component meets RoHS Directive 2002/95/EC requirements for your region. Check for any recent revision updates or superseding documents before finalizing procurement specifications.
Select this component for high-power CW applications requiring broadband performance in the 425 MHz to 450 MHz range. Ensure the design accommodates the SOT1270-1 package dimensions and thermal management needs. Verify that the operating junction temperature remains within the specified limits to maintain reliability and performance standards.
This part belongs to Ampleon's BLC10 series of LDMOS power transistors. It is specifically engineered for industrial, scientific, and medical (ISM) frequency bands. The device integrates internal matching networks to reduce external component count and simplify amplifier design for RF lighting systems.
No public confirmed substitute part numbers are available in the provided documentation.
The BLC10M6XS200 can withstand a load mismatch corresponding to a VSWR of 20:1 through all phases under specified Class-AB operating conditions.
The device features integrated ESD protection, classified as C1 for Charged Device Model and Level 2 for Human Body Model.
At 440 MHz with 200 W output power, the typical drain efficiency is 80%.