BLC10M6XS200Z

Overview

The BLC10M6XS200 is a 200 W LDMOS power transistor designed for RF lighting applications in the 425 MHz to 450 MHz ISM band. It operates with a drain-source voltage of 65 V and features an internally matched input for simplified circuit design. The device utilizes a SOT1270-1 air cavity plastic earless flanged package, providing excellent thermal resistance through its copper flange. Typical performance at 440 MHz includes 200 W output power, 21 dB gain, and 80% drain efficiency under continuous wave conditions.

Feature Summary

• High efficiency and ruggedness suitable for high-power CW applications
• Excellent thermal resistance due to integrated copper flange
• Internally input matched for broadband operation between 425 MHz and 450 MHz
• Integrated ESD protection compliant with C1 and HBM Class 2 standards

Applications

• RF lighting applications in the 425 MHz to 450 MHz ISM band

Procurement Notes

Verify the specific ordering suffix against the manufacturer's current documentation to ensure correct packaging and handling specifications. Confirm that the procurement channel provides valid RoHS compliance declarations as specified in the product data sheet. Ensure proper ESD precautions are maintained during storage and installation to prevent damage to the internal protection circuits.

Selection Notes

Select this component when designing amplifiers for the 425 MHz to 450 MHz frequency range requiring up to 200 W output power. The internal input matching simplifies the design process by reducing external component requirements. Ensure the application circuit can maintain the case temperature within recommended limits to preserve the device's thermal performance and reliability over time.

Part Context

This part belongs to Ampleon's portfolio of LDMOS power transistors engineered for robust RF performance. The BLC10M6XS200 specifically targets industrial, scientific, and medical (ISM) bands where high power density and thermal stability are critical. Its construction supports reliable operation in demanding environments typical of modern RF lighting infrastructure.

Replacement Considerations

Consult official Ampleon documentation for verified substitute part numbers before implementation. Do not assume functional equivalence based on similar package types or general power ratings without cross-referencing electrical characteristics and pin configurations.

FAQ

What is the maximum junction temperature rating?

The maximum junction temperature is rated at 225 °C.

How does the device handle load mismatches?

It can withstand a load mismatch corresponding to a VSWR of 20:1 through all phases under specified operating conditions.

What is the typical drain efficiency at full power?

At 440 MHz with 200 W output power, the typical drain efficiency is 80%.