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The BLC2425M10LS500P is a 500 W LDMOS power transistor designed for commercial, consumer, industrial, scientific, and medical applications in the 2400 MHz to 2500 MHz frequency range. It operates at VDS = 32 V with IDq = 20 mA, delivering 500 W output power, 15.0 dB gain, and 67.5% drain efficiency. The device features a SOT1250-1 plastic earless flanged package with integrated ESD protection and internal matching.
Verify the specific ordering suffix against official Ampleon documentation to ensure correct packaging and handling specifications. Confirm RoHS compliance status via the manufacturer's website before procurement. Ensure proper ESD precautions are observed during storage and handling due to the component's sensitivity classification.
Select this component for high-power continuous wave applications requiring broadband performance between 2400 MHz and 2500 MHz. Consider the 65 V drain-source voltage limit and 225 °C junction temperature rating when designing thermal management solutions. Verify impedance matching requirements using the provided typical load-pull data for optimal power transfer.
This part belongs to Ampleon's LDMOS power transistor portfolio, specifically engineered for RF energy applications. It utilizes a high-performance plastic cavity package to achieve high power density. The device is optimized for class-AB operation, providing a balance of gain, efficiency, and linearity suitable for demanding industrial and consumer environments.
Consult official Ampleon substitution guides for verified equivalent parts. Do not assume pin-compatible replacements without verifying electrical characteristics and thermal resistance values.
The device can withstand a load mismatch corresponding to VSWR = 20:1 through all phases under specified operating conditions.
It features integrated ESD protection, classified as C2A for Charged Device Model and Class 2 for Human Body Model.
The typical thermal resistance from junction to case is 0.17 K/W at Tcase = 75°C and PL = 500 W.