BLC6G22LS-75,112

Overview

The BLC6G22LS-75,112 is an LDMOS RF power transistor manufactured by NXP USA Inc. It operates within the frequency range of 2.11GHz to 2.17GHz. The device features a gain of 18.5dB and delivers a power output of 17W. It requires a test voltage of 28V and has a maximum current rating of 690mA. The component is housed in a SOT896B package.

Feature Summary

• Utilizes LDMOS technology for RF power amplification
• Designed for operation in the 2.11GHz to 2.17GHz frequency band
• Provides high power output capability with specified gain characteristics

Applications

• RF power amplification in wireless communication systems
• Base station transmitter modules
• Broadband signal processing equipment

Procurement Notes

Verify product status as obsolete before procurement planning. Confirm tariff applicability for shipments to the United States. Ensure compatibility with existing SOT896B footprints. Check for valid test reports if quality assurance is required for legacy system maintenance.

Selection Notes

Select this component only for designs requiring specific 28V LDMOS performance at 2.11GHz to 2.17GHz. Consider that the part is discontinued. Evaluate thermal management requirements for 17W output. Verify that the SOT896B package fits the target PCB layout constraints.

Part Context

This device belongs to the BLC6 series of UHF and S-band power LDMOS transistors from NXP Semiconductors. It is engineered for robust RF performance in demanding amplifier applications. The SOT896B package provides efficient heat dissipation for high-power density operations.

Replacement Considerations

Public confirmed substitute part numbers are not available in the provided documentation. As the product status is obsolete, alternative sourcing may require cross-referencing with manufacturer obsolescence notices or approved second-source lists.