BLC8G20LS-400AVY

Overview

The BLC8G20LS-400AVY is a 400 W LDMOS asymmetric Doherty power transistor designed for base station applications in the 1800 MHz to 2000 MHz frequency range. It features an air cavity plastic earless flanged package (SOT1258-1) with six leads. The device operates at a drain-source voltage of 65 V and delivers 85 W average output power with 15.5 dB gain under 1-carrier W-CDMA testing conditions. Key electrical parameters include a drain efficiency of 44% and an adjacent channel power ratio of -31 dBc.

Feature Summary

• Designed for conventional and inverted Doherty amplifier configurations
• Internally matched for ease of use with integrated ESD protection
• Low thermal resistance providing excellent thermal stability
• Lower output capacitance for improved performance in Doherty applications

Applications

• RF power amplifiers for base stations
• Multi carrier applications in the 1800 MHz to 2000 MHz frequency range

Procurement Notes

Verify the specific ordering suffix against the manufacturer's current documentation, as revisions may update package designations or pin assignments. Confirm RoHS compliance status and ensure handling procedures meet CDM Class C2A and HBM Class 2 electrostatic discharge requirements during assembly.

Selection Notes

Select this component for high-efficiency asymmetric Doherty designs requiring low memory effects and robust digital pre-distortion capability. Ensure the application environment supports the specified case temperature range of -40°C to +125°C and that the load impedance matches the recommended values for optimal power gain and drain efficiency.

Part Context

This part belongs to Ampleon's portfolio of RF power transistors derived from NXP Semiconductors' legacy technology. It is specifically engineered for cellular infrastructure, offering ruggedness against load mismatches up to 10:1 VSWR while maintaining stable electrical performance across varying operating conditions.

Replacement Considerations

Consult official substitution lists for verified alternatives. Generic replacements may not match the specific internal matching network or impedance characteristics required for Doherty architectures.