BLC8G21LS-160AVZ

Overview

The BLC8G21LS-160AV is a dual N-channel LDMOS transistor designed for base station applications in the 1805 MHz to 2025 MHz frequency range. It features an air cavity plastic earless flanged package (SOT1275-1) with six leads, including dedicated video decoupling pins. The device operates at a drain-source voltage of 65 V and delivers a typical average output power of 160 W. Key electrical parameters include a maximum junction temperature of 225 °C, a gate-source threshold voltage of 1.9 V typ, and a forward transconductance of 0.60 S for the main device. It provides high power gain and efficiency suitable for multi-carrier systems.

Feature Summary

• Designed for broadband operation across the 1805 MHz to 2025 MHz spectrum
• Features integrated ESD protection compliant with C2A and HBM Class 2 standards
• Includes decoupling leads to enable improved video bandwidth performance
• Internally matched for ease of use with high power gain and excellent thermal stability

Applications

• RF power amplifiers for base station applications
• Multi-carrier applications in the 1805 MHz to 2025 MHz frequency range
• Doherty amplifier configurations requiring high ruggedness

Procurement Notes

Verify the specific ordering suffix against the manufacturer's current documentation to ensure correct package version and compliance status. Confirm that the required RoHS directive compliance matches the project specifications. Check the latest product data sheet revision history for any updates to limiting values or thermal characteristics before finalizing procurement orders.

Selection Notes

Select this component for designs requiring high power density and wideband capability in cellular infrastructure. Ensure the cooling solution supports the specified thermal resistance from junction to case under maximum operating conditions. Verify that the input and output impedance matching networks align with the provided load-pull data for optimal power gain and drain efficiency at the target carrier frequencies.

Part Context

This part belongs to Ampleon's LDMOS transistor portfolio specifically engineered for wireless communication infrastructure. It utilizes Laterally Diffused Metal Oxide Semiconductor technology to achieve high linearity and efficiency. The device is housed in a robust flanged package designed for effective heat dissipation and reliable operation in demanding RF environments.

Replacement Considerations

Consult official Ampleon documentation for verified substitute part numbers. Do not assume functional equivalence with other models without cross-referencing pinouts, thermal characteristics, and RF performance specifications.