BLC8G24LS-240AVY

BLC8G24LS-240AVY

$144.05
  • Description:RF MOSFET LDMOS 28V DFM8
  • Series:-

SKU:a0264a606028 Category: Brand:

  
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Product Detailed Parameters

  • Description:RF MOSFET LDMOS 28V DFM8
  • Series:-
  • Mfr:Ampleon USA Inc.
  • Package:Tape & Reel (TR),Tape & Reel (TR)
  • Technology:LDMOS
  • Frequency:2.3GHz ~ 2.4GHz
  • Gain:14.5dB
  • Voltage - Test:28 V
  • Current Rating (Amps):-
  • Noise Figure:-
  • Current - Test:500 mA
  • Power - Output:56W
  • Voltage - Rated:65 V
  • Grade:-
  • Qualification:-
  • Mounting Type:Chassis Mount
  • Package / Case:SOT-1252-1
  • Supplier Device Package:DFM8
  • Configuration:Dual, Common Source

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BLC8G24LS-240AVY

Overview

The BLC8G24LS-240AV is a 240 W LDMOS asymmetric Doherty power transistor designed for base station applications in the 2300 MHz to 2400 MHz frequency range. It features an air cavity plastic earless flanged package (SOT1252-1) with eight leads. The device operates at a drain-source voltage of 28 V and delivers typical performance including 14.5 dB power gain, 44% drain efficiency, and -29 dBc adjacent channel power ratio under 1-carrier W-CDMA test conditions. It exhibits excellent ruggedness, capable of withstanding a VSWR of 10:1 through all phases.

Feature Summary

  • Asymmetric design optimized for high-efficiency operation across the 2300 MHz to 2400 MHz band
  • Low thermal resistance ensuring excellent thermal stability and heat dissipation
  • Internally matched structure for simplified circuit integration
  • Integrated ESD protection compliant with CDM Class C2A and HBM Class 2 standards

Applications

  • RF power amplifiers for base stations operating in the 2300 MHz to 2400 MHz range
  • Multi-carrier applications utilizing asymmetrical Doherty architectures
  • W-CDMA signal processing requiring low memory effects and digital pre-distortion capability

Procurement Notes

Verify the specific ordering suffix against official Ampleon documentation to confirm packaging details and compliance status. Ensure that procurement channels provide valid traceability for this production-grade component. Confirm RoHS Directive 2002/95/EC compliance requirements are met by the supplier before finalizing acquisition.

Selection Notes

Select this component for designs requiring high output power and efficiency in asymmetric Doherty configurations within the specified frequency band. Evaluate the thermal management strategy based on the junction-to-case thermal resistance value. Consider the internal matching network when designing input and output impedance circuits to maximize power transfer and gain.

Part Context

This part belongs to the BLC8G24LS series of LDMOS power transistors manufactured by Ampleon. These devices are engineered specifically for wireless infrastructure, offering robust performance in demanding RF environments. The SOT1252-1 package provides a compact form factor suitable for modern base station module designs.

Replacement Considerations

Consult the official Ampleon datasheet or contact authorized distributors for verified substitute part numbers. Do not assume functional equivalence with other models without reviewing detailed electrical specifications and pinout compatibility.

BLC8G24LS-240AVYBLC8G24LS-240AVY
$144.05
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