BLC8G24LS-241AVY

BLC8G24LS-241AVY

$53.43
  • Description:RF MOSFET LDMOS 28V DFM8
  • Series:-

SKU:cb37011b8579 Category: Brand:

  
  • Quantity
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Product Detailed Parameters

  • Description:RF MOSFET LDMOS 28V DFM8
  • Series:-
  • Mfr:Ampleon USA Inc.
  • Package:Tape & Reel (TR),Bulk
  • Technology:LDMOS
  • Frequency:2.3GHz ~ 2.4GHz
  • Gain:14.5dB
  • Voltage - Test:28 V
  • Current Rating (Amps):-
  • Noise Figure:-
  • Current - Test:500 mA
  • Power - Output:56W
  • Voltage - Rated:65 V
  • Grade:-
  • Qualification:-
  • Mounting Type:Chassis Mount
  • Package / Case:SOT-1252-1
  • Supplier Device Package:DFM8
  • Configuration:Dual, Common Source

Download product information

BLC8G24LS-241AVY

Overview

The BLC8G24LS-241AV is a 240 W LDMOS asymmetric Doherty power transistor designed for base station applications in the 2300 MHz to 2400 MHz frequency range. It operates with a drain-source voltage of 28 V and features an air cavity plastic earless flanged package (SOT1252-1). The device delivers typical output powers of 255 W to 290 W at 3 dB gain compression, achieving drain efficiencies up to 65.5% under maximum efficiency loads. It exhibits excellent ruggedness, supporting VSWR mismatches of 10:1 through all phases.

Feature Summary

  • Asymmetric design optimized for high-efficiency Doherty amplifier operation across the 2300 MHz to 2400 MHz band
  • Internally matched structure with integrated ESD protection for simplified circuit integration
  • Low thermal resistance ensuring stable performance under continuous high-power conditions
  • Enhanced linearity characteristics suitable for digital pre-distortion in complex modulation schemes

Applications

  • RF power amplifiers for cellular base stations operating in the 2300 MHz to 2400 MHz spectrum
  • Multi-carrier applications utilizing asymmetric Doherty architectures
  • Broadband RF power amplification requiring low memory effects

Procurement Notes

Verify component authenticity by cross-referencing the part number against official Ampleon documentation. Confirm that the physical package matches the SOT1252-1 outline and that the device complies with RoHS directives. Ensure handling procedures adhere to ESD sensitivity standards specified in the datasheet to prevent damage during installation.

Selection Notes

Select this component for designs requiring high power density and efficiency in the 2.3 GHz band. Evaluate thermal management capabilities based on the junction-to-case thermal resistance value. Consider the internal matching network when designing input and output impedance circuits to maximize power transfer and stability within the target application environment.

Part Context

This device belongs to the Ampleon LDMOS power transistor portfolio, specifically engineered for telecommunications infrastructure. It represents a specialized solution for modern base station architectures that demand high linearity and efficiency simultaneously. The product supports the transition to advanced wireless standards requiring robust RF performance in compact form factors.

Replacement Considerations

Consult official Ampleon resources for qualified substitute part numbers. Verify compatibility regarding pinout configuration, thermal characteristics, and electrical specifications before implementing any alternative components in existing designs.

FAQ

What is the maximum load mismatch the device can withstand?

The BLC8G24LS-241AV can withstand a load mismatch corresponding to a VSWR of 10:1 through all phases under specified Class-AB operating conditions.

What is the typical video bandwidth in Doherty operation?

The device demonstrates a typical video bandwidth of 80 MHz in a Doherty test circuit at 2.35 GHz.

How is the device protected against electrostatic discharge?

The BLC8G24LS-241AV includes integrated ESD protection, meeting CDM classification C2A and HBM classification 2 standards.

BLC8G24LS-241AVYBLC8G24LS-241AVY
$53.43
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