BLC8G27LS-180AVY

Overview

The BLC8G27LS-180AV is an asymmetrical Doherty power transistor manufactured by Ampleon. It utilizes LDMOS technology and operates within the 2496 MHz to 2690 MHz frequency range. The device provides a typical output power of 180 W at 3 dB gain compression, with a drain efficiency reaching 43.5% under 1-carrier W-CDMA conditions. Key electrical parameters include a drain-source voltage rating of 65 V, a gate-source voltage limit of +13 V, and a junction temperature maximum of 225 °C. The component features integrated ESD protection and is housed in an air cavity plastic earless flanged package (SOT1275-1) with six leads.

Feature Summary

• Asymmetrical design optimized for high efficiency across broadband operation
• Integrated video decoupling leads to enhance performance in Doherty applications
• Internally matched input and output circuits for simplified integration
• Low thermal resistance ensuring excellent thermal stability

Applications

• RF power amplifier for W-CDMA base stations
• Multi-carrier applications in the 2496 MHz to 2690 MHz frequency range
• Asymmetrical Doherty amplifier architectures

Procurement Notes

Verify the specific ordering suffix against the manufacturer's current documentation to ensure correct package versioning. Confirm RoHS compliance status through official channels prior to procurement. Ensure handling procedures strictly adhere to CDM Class C2A and HBM Class 2 electrostatic discharge sensitivity guidelines during storage and assembly.

Selection Notes

Select this component for designs requiring high linearity and efficiency in asymmetric Doherty configurations. Verify that the application supports the specified 28 V drain-source voltage and 225 °C junction temperature limits. Ensure the RF layout accommodates the SOT1275-1 package dimensions and impedance requirements for both main and peak devices.

Part Context

This part belongs to the BLC8G27LS series of LDMOS transistors designed specifically for cellular base station infrastructure. It is engineered to replace older generation components by offering improved ruggedness and lower memory effects. The asymmetrical structure differentiates it from standard symmetric power transistors, making it specialized for advanced modulation schemes.

Replacement Considerations

Direct replacements are not explicitly listed in the provided datasheet. Evaluate alternative models within the BLC8G27LS family or consult Ampleon for updated product recommendations based on specific impedance and power requirements.