BLC8G27LS-210PVY

Overview

The BLC8G27LS-210PV is a 200 W LDMOS power transistor designed for base station applications in the 2500 MHz to 2700 MHz frequency range. It features improved video bandwidth and low memory effects, making it suitable for multi-carrier systems like W-CDMA and IS-95. The device operates with a drain-source voltage of 65 V and a junction temperature up to 225 °C. In typical class-AB operation at 28 V, it delivers approximately 17 dB gain and 30% drain efficiency. The transistor includes integrated ESD protection and is housed in an SOT1251-1 air cavity plastic earless flanged package.

Feature Summary

• Decoupling leads enable improved video bandwidth performance for enhanced linearity
• Lower output capacitance improves performance in Doherty amplifier configurations
• Designed for broadband operation across the 2500 MHz to 2700 MHz spectrum
• Internally matched structure simplifies circuit design and integration

Applications

• RF power amplifiers for base stations operating between 2500 MHz and 2700 MHz
• Multi-carrier applications utilizing W-CDMA technology
• Broadband RF power amplification requiring high ruggedness and thermal stability

Procurement Notes

Verify the specific ordering suffix against official Ampleon documentation to confirm package version and compliance status. Ensure that the procurement channel provides valid product data sheets matching the exact part number. Confirm RoHS directive compliance requirements prior to finalizing orders. Validate that the supplier source aligns with authorized distribution channels to guarantee component authenticity and traceability.

Selection Notes

Select this component for designs requiring high power output within the 2.5 GHz to 2.7 GHz band. The internal matching network reduces external component count. Evaluate thermal management capabilities given the 0.22 K/W junction-to-case resistance. Consider the device's ruggedness specifications for environments prone to load mismatches. Verify impedance matching networks against the provided load-pull data for optimal efficiency.

Part Context

This LDMOS transistor belongs to Ampleon's portfolio of radio frequency power devices engineered for telecommunications infrastructure. It represents a solution for modern cellular base stations demanding high efficiency and linearity. The device supports complex modulation schemes through its low memory effect characteristics. It serves as a critical active element in power amplifier modules for wideband code division multiple access networks.

Replacement Considerations

Consult official Ampleon substitution guides for verified alternatives. Cross-reference pinouts and thermal characteristics when evaluating potential replacements. Ensure any substitute device meets the same voltage and frequency specifications.