BLC8G27LS-240AVJ

Overview

The BLC8G27LS-240AV is a 240 W LDMOS packaged asymmetric Doherty power transistor designed for base station applications at frequencies from 2500 MHz to 2700 MHz. It operates with a drain-source voltage of 28 V and features an internal matching network. The device utilizes an air cavity plastic earless flanged package (SOT1252-1) with eight leads. Key electrical parameters include a maximum drain-source voltage of 65 V, a junction temperature limit of 225 °C, and a thermal resistance from junction to case of 0.3 K/W under specified conditions.

Feature Summary

• Asymmetric design optimized for high efficiency across the operating band in Doherty configurations
• Low output capacitance to enhance performance in asymmetric Doherty amplifier architectures
• Internally matched structure to simplify circuit integration and reduce design complexity
• Integrated electrostatic discharge protection compliant with CDM Class C2A and HBM Class 2 standards

Applications

• RF power amplifiers for cellular base stations
• Multi-carrier applications within the 2500 MHz to 2700 MHz frequency range
• Asymmetric Doherty power amplifier modules

Procurement Notes

Verify the specific ordering suffix against the manufacturer's current documentation to ensure correct packaging and handling specifications. Confirm that the procurement channel provides original manufacturer data sheets. Ensure all handling procedures strictly adhere to ESD safety protocols during storage and assembly to prevent damage to the sensitive semiconductor junctions.

Selection Notes

Select this component when designing asymmetric Doherty power amplifiers requiring high efficiency and low memory effects in the 2500 MHz to 2700 MHz spectrum. Evaluate the thermal management requirements based on the 0.3 K/W junction-to-case thermal resistance. Ensure the application environment supports the specified maximum junction temperature of 225 °C for reliable long-term operation.

Part Context

This part belongs to Ampleon's portfolio of RF power transistors derived from NXP Semiconductors' legacy technology. It is specifically engineered for modern telecommunications infrastructure, addressing the demands of multi-carrier signals like W-CDMA. The device represents a specialized solution for base station sectors requiring robust linearity and high power density.

Replacement Considerations

Consult official Ampleon documentation for verified substitute part numbers. Cross-reference pinouts, thermal characteristics, and RF performance metrics before considering any alternative components.