BLC8G27LS-60AVY

Overview

The BLC8G27LS-60AVY is a 60 W LDMOS asymmetrical Doherty power transistor for base station applications at frequencies from 2300 MHz to 2690 MHz. It operates with VDS = 28 V and IDq = 100 mA (main). Typical RF performance at Tcase = 25 °C includes power gain of 15.2 dB, drain efficiency of 47%, and ACPR of -30 dBc under 1-carrier W-CDMA test conditions. The device features separate main and peak devices with integrated ESD protection and video decoupling leads. Limiting values include VDS max of 65 V and junction temperature max of 225 °C.

Feature Summary

• Designed for low memory effects providing excellent pre-distortability
• Internally matched for ease of use in production circuits
• Integrated ESD protection compliant with C2A and 0B classifications
• Decoupling leads enable improved video bandwidth for Doherty architectures

Applications

• RF power amplifier for LTE base stations
• Multi carrier applications in the 2300 MHz to 2690 MHz frequency range
• Asymmetrical Doherty power amplifier designs

Procurement Notes

Verify the specific ordering suffix against the manufacturer's current documentation to ensure correct package variant selection. Confirm that the component meets RoHS Directive 2002/95/EC requirements for your region. Ensure handling procedures adhere to ANSI/ESD S20.20 standards due to the device's electrostatic sensitivity classification.

Selection Notes

Select this component for high-efficiency Doherty PA implementations requiring ruggedness against load mismatches up to 10:1 VSWR. Verify thermal management capabilities against the specified Rth(j-case) values at target power levels. Ensure the design supports the required video bandwidth and impedance matching networks detailed in the application notes for optimal linearity and efficiency.

Part Context

This part belongs to Ampleon's BLC8G27LS series of LDMOS transistors optimized for cellular infrastructure. It shares architectural similarities with other models in the family but is specifically tuned for asymmetrical Doherty operation. The device integrates both main and peak transistor functions into a single package to simplify circuit layout and improve performance consistency.

Replacement Considerations

Public confirmed substitute part numbers are not available in the provided datasheet. Designers should consult Ampleon directly for qualified alternatives or cross-reference options based on specific electrical and mechanical constraints.