BLC9G20LS-120VY

BLC9G20LS-120VY

$52.45
  • Description:RF MOSFET LDMOS 28V SOT1275-3
  • Series:-

SKU:ac58398e8998 Category: Brand:

  
  • Quantity
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Product Detailed Parameters

  • Description:RF MOSFET LDMOS 28V SOT1275-3
  • Series:-
  • Mfr:Ampleon USA Inc.
  • Package:Tape & Reel (TR),Cut Tape (CT),Bulk
  • Technology:LDMOS
  • Frequency:1.81GHz ~ 1.88GHz
  • Gain:19.2dB
  • Voltage - Test:28 V
  • Current Rating (Amps):-
  • Noise Figure:-
  • Current - Test:700 mA
  • Power - Output:120W
  • Voltage - Rated:65 V
  • Grade:-
  • Qualification:-
  • Mounting Type:Chassis Mount
  • Package / Case:SOT-1275-3
  • Supplier Device Package:SOT-1275-3
  • Configuration:-

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BLC9G20LS-120VY

Overview

The BLC9G20LS-120V is a 120 W LDMOS power transistor designed for base station applications at frequencies from 1805 MHz to 1995 MHz. It features enhanced video bandwidth performance with decoupling leads providing a typical 75 MHz bandwidth. The device operates with a drain-source voltage of 28 V and quiescent current of 700 mA, delivering 30 W average output power with 31% drain efficiency in a two-carrier W-CDMA test circuit. It exhibits excellent ruggedness, capable of withstanding a VSWR of 10:1 through all phases. The transistor is internally matched and housed in an air cavity plastic earless flanged package (SOT1275-1) with six leads.

Feature Summary

  • Enhanced video bandwidth performance enabled by decoupling leads
  • Low thermal resistance ensuring excellent thermal stability
  • Lower output capacitance optimized for Doherty applications
  • Internally matched design for ease of use

Applications

  • RF power amplifiers for base stations
  • Multi carrier applications in the 1805 MHz to 1995 MHz frequency range

Procurement Notes

Verify the specific ordering suffix against the manufacturer's official documentation to ensure correct package version and compliance status. Confirm that the component meets RoHS Directive 2002/95/EC requirements before integration. Ensure proper ESD handling protocols are followed during procurement and storage, as the device is sensitive to electrostatic discharge.

Selection Notes

Select this component for broadband operations requiring high efficiency and low memory effects within the specified frequency band. Consider its internal matching and low output capacitance when designing Doherty amplifier architectures. Verify thermal management capabilities align with the junction-to-case thermal resistance specifications for the intended operating environment.

Part Context

This part belongs to Ampleon's LDMOS power transistor portfolio tailored for wireless infrastructure. It is specifically engineered to support multi-carrier systems like W-CDMA. The device integrates ESD protection and is compliant with hazardous substance restrictions, positioning it for modern telecommunications equipment manufacturing.

Replacement Considerations

Consult the official Ampleon datasheet or contact local sales offices for confirmed substitute part numbers. Do not assume functional equivalence with other models without verifying electrical parameters and pin configurations.

BLC9G20LS-120VYBLC9G20LS-120VY
$52.45
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