BLC9G20LS-120VZ

BLC9G20LS-120VZ

$45.47
  • Description:RF MOSFET LDMOS 28V SOT1275-3
  • Series:-

SKU:85530abf7f44 Category: Brand:

  
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Product Detailed Parameters

  • Description:RF MOSFET LDMOS 28V SOT1275-3
  • Series:-
  • Mfr:Ampleon USA Inc.
  • Package:Bulk,Tray
  • Technology:LDMOS
  • Frequency:1.81GHz ~ 1.88GHz
  • Gain:19.2dB
  • Voltage - Test:28 V
  • Current Rating (Amps):-
  • Noise Figure:-
  • Current - Test:700 mA
  • Power - Output:120W
  • Voltage - Rated:65 V
  • Grade:-
  • Qualification:-
  • Mounting Type:Chassis Mount
  • Package / Case:SOT-1275-3
  • Supplier Device Package:SOT-1275-3
  • Configuration:-

Download product information

BLC9G20LS-120VZ

Overview

The BLC9G20LS-120V is a 120 W LDMOS power transistor designed for base station applications in the 1805 MHz to 1995 MHz frequency range. It features enhanced video bandwidth and low memory effects, making it suitable for multi-carrier systems like W-CDMA. The device operates at a drain-source voltage of 28 V with a quiescent current of 700 mA. Typical performance includes a power gain of 19.2 dB and a drain efficiency of 31% at an average output power of 30 W. It utilizes an SOT1275-1 air cavity plastic earless flanged package.

Feature Summary

  • Enhanced video bandwidth achieved through decoupling leads
  • Low thermal resistance providing excellent thermal stability
  • Lower output capacitance optimized for Doherty applications
  • Designed for low memory effects to improve pre-distortability

Applications

  • RF power amplifiers for base stations
  • Multi-carrier applications in the 1805 MHz to 1995 MHz frequency range

Procurement Notes

Verify the specific ordering suffix against the manufacturer's official documentation to ensure correct packaging and handling specifications. Confirm that the component meets RoHS compliance requirements as stated in the product data sheet. Ensure proper ESD precautions are observed during storage and assembly due to the device's sensitivity classification.

Selection Notes

Select this component for designs requiring high ruggedness and efficiency in the 1800 MHz band. Verify that the application circuit can support the required 28 V drain supply and 700 mA quiescent current. Ensure the thermal management system maintains the case temperature within specified limits to preserve reliability and prevent junction overheating.

Part Context

This part belongs to Ampleon's LDMOS power transistor portfolio, specifically engineered for wireless infrastructure. It represents a solution for modern cellular base stations requiring robust performance under complex modulation schemes. The device integrates internal matching to simplify RF design implementation.

Replacement Considerations

Consult the official Ampleon datasheet or contact authorized distributors for verified substitute part numbers. Do not assume functional equivalence with other models without reviewing specific electrical parameters and pin configurations.

FAQ

What is the typical video bandwidth of the BLC9G20LS-120V?

The device exhibits a typical video bandwidth of 75 MHz in a class-AB test circuit.

How does the BLC9G20LS-120V handle load mismatches?

It can withstand a load mismatch corresponding to a VSWR of 10:1 through all phases under specified operating conditions.

What package type is used for this transistor?

The BLC9G20LS-120V is housed in an SOT1275-1 air cavity plastic earless flanged package.

BLC9G20LS-120VZBLC9G20LS-120VZ
$45.47
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