BLC9G20LS-160PV

BLC9G20LS-160PV

  • Description:RF MOSFET LDMOS 28V DFM6
  • Series:-

SKU:65f93ec8aae8 Category: Brand:

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Product Detailed Parameters

  • Description:RF MOSFET LDMOS 28V DFM6
  • Series:-
  • Mfr:Ampleon USA Inc.
  • Package:Tray
  • Technology:LDMOS
  • Frequency:1.805GHz ~ 2GHz
  • Gain:19.8dB
  • Voltage - Test:28 V
  • Current Rating (Amps):1.4µA
  • Noise Figure:-
  • Current - Test:860 mA
  • Power - Output:160W
  • Voltage - Rated:65 V
  • Grade:-
  • Qualification:-
  • Mounting Type:Chassis Mount
  • Package / Case:SOT-1275-1
  • Supplier Device Package:DFM6
  • Configuration:Dual, Common Source

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BLC9G20LS-160PV

Overview

The BLC9G20LS-160PV is a 160 W LDMOS power transistor designed for base station applications in the 1805 MHz to 2000 MHz frequency range. It features enhanced video bandwidth and low memory effects, making it suitable for multi-carrier systems like W-CDMA. The device operates with a drain-source voltage of up to 65 V and includes integrated ESD protection. Typical performance at 28 V and 860 mA quiescent current yields 38 W output power with 34.5% drain efficiency and 19.8 dB gain. It utilizes an air cavity plastic earless flanged package (SOT1275-1) with six leads.

Feature Summary

  • Enhanced video bandwidth capability through decoupling leads
  • Low thermal resistance ensuring excellent thermal stability
  • Lower output capacitance optimized for Doherty amplifier configurations
  • Internally matched design for simplified circuit integration

Applications

  • RF power amplifiers for base stations
  • Multi-carrier applications in the 1805 MHz to 2000 MHz range
  • W-CDMA signal processing

Procurement Notes

Verify component authenticity by checking the manufacturer's official documentation against the physical marking on the SOT1275-1 package. Confirm that the part meets the specific electrical requirements for your target frequency band within the 1805 MHz to 2000 MHz range. Ensure proper handling protocols are followed due to the device's sensitivity to electrostatic discharge.

Selection Notes

Select this component when designing broadband RF power amplifiers requiring high ruggedness and low memory effects. It is particularly suited for applications demanding enhanced video bandwidth performance. Consider its internal matching and low output capacitance if utilizing Doherty architectures. Verify that the thermal management system can handle the junction-to-case thermal resistance specified in the datasheet.

Part Context

This device belongs to Ampleon's portfolio of LDMOS power transistors engineered for telecommunications infrastructure. It represents a solution for modernizing base station capabilities by supporting complex modulation schemes with improved linearity. The product is manufactured using advanced processes to ensure reliability in continuous operation environments typical of cellular network deployments.

Replacement Considerations

Consult the official Ampleon replacement guide or contact technical support directly for verified substitute part numbers. Do not assume compatibility based solely on package dimensions or general specifications.

BLC9G20LS-160PVBLC9G20LS-160PV

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