BLC9G20LS-160PVZ

$54.56

Description：RF MOSFET LDMOS 28V DFM6
Series：-

SKU:ccd5d8a8b9e4 Category: RF FETs, MOSFETs Brand: Ampleon USA Inc.

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Product introduction

Product Detailed Parameters

Description：RF MOSFET LDMOS 28V DFM6
Series：-
Mfr：Ampleon USA Inc.
Package：Bulk,Tray
Technology：LDMOS
Frequency：1.805GHz ~ 2GHz
Gain：20dB
Voltage - Test：28 V
Current Rating (Amps)：1.4µA
Noise Figure：-
Current - Test：860 mA
Power - Output：38W
Voltage - Rated：65 V
Grade：-
Qualification：-
Mounting Type：Chassis Mount
Package / Case：SOT-1275-1
Supplier Device Package：DFM6
Configuration：-

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BLC9G20LS-160PVZ

Overview

The BLC9G20LS-160PV is a 160 W LDMOS power transistor designed for base station applications in the 1805 MHz to 2000 MHz frequency range. It features enhanced video bandwidth and low memory effects, making it suitable for multi-carrier systems. The device operates with a drain-source voltage of 28 V and delivers typical performance metrics including 34.5% drain efficiency and 19.8 dB gain at 38 W output power. It utilizes an SOT1275-1 air cavity plastic earless flanged package.

Feature Summary

Enhanced video bandwidth capability through decoupling leads
Low thermal resistance ensuring excellent thermal stability
Internally matched design for simplified integration
Integrated ESD protection compliant with C2A and HBM Class 2 standards

Applications

RF power amplifiers for base stations
Multi-carrier applications in the 1805 MHz to 2000 MHz range
W-CDMA signal amplification

Procurement Notes

Verify component authenticity by checking the manufacturer's official documentation against the specific part number BLC9G20LS-160PV. Confirm that the package type matches the SOT1275-1 specification. Ensure compliance with RoHS directives as stated in the product data sheet before procurement.

Selection Notes

Select this component for broadband operations requiring high efficiency and ruggedness in class-AB mode. Consider its suitability for Doherty amplifier configurations due to lower output capacitance. Evaluate thermal management requirements based on the junction-to-case thermal resistance value provided in the datasheet.

Part Context

This transistor belongs to Ampleon's LDMOS power transistor portfolio, specifically engineered for wireless infrastructure. It represents a solution for modern cellular base stations needing high linearity and power density within the specified UMTS/LTE bands.

Replacement Considerations

Consult official Ampleon substitution guides for verified alternatives. Cross-reference electrical parameters such as breakdown voltage, gain, and package dimensions when evaluating potential replacement parts.

How to buy

Online and offline orders are supported. If the item is available for online purchase, you can place it in the cart; for wholesale pricing, please contact our product manager for a quote.

Payment Method

Payment methods: T/T, WeChat Pay, credit cards, Google Pay, Apple Pay . Buyer covers shipping, fees, duties, and taxes; contact our product manager if you need a contract/procurement process.

Delivery time

In-stock items usually ship within 24 hours. Otherwise, shipment is arranged 1 to 2 days after the items arrive at our warehouse. Timing depends on destination and shipping method.

Freight calculation

Freight cost depends on destination, package size, and weight . We offer shipping options via DHL, FedEx, UPS, and TNT , and can ship using your freight account upon request.

Mode of Transportation

We ship via DHL, FedEx, UPS, and TNT. If you prefer a specific logistics provider, we can ship using your designated carrier.

Return and Refund

Returns are accepted within 60 days of invoice with RMA approval. Items must be resalable; original invoice and test report are required. No returns for customer errors.