BLC9G20LS-361AVTY

Overview

The BLC9G20LS-361AVT is a 360 W LDMOS asymmetric Doherty power transistor designed for base station applications in the 1805 MHz to 1990 MHz frequency range. It features an air cavity plastic earless flanged package (SOT1258-1) with six leads. The device operates at a drain-source voltage of 28 V and delivers typical power gain between 14.5 dB and 16.6 dB, with drain efficiency ranging from 42.5% to 57.5%. It includes integrated ESD protection compliant with CDM Class C2A and HBM Class 2 standards.

Feature Summary

• Asymmetric design optimized for Doherty amplifier configurations to maintain high efficiency across the operating band
• Low thermal resistance providing excellent thermal stability and ruggedness under load mismatch conditions
• Internally matched structure simplifying circuit integration and reducing external component requirements
• Integrated electrostatic discharge protection compatible with standard handling protocols

Applications

• RF power amplifiers for cellular base stations
• Multi-carrier applications within the 1805 MHz to 1990 MHz spectrum
• Asymmetric Doherty power amplifier architectures

Procurement Notes

Verify the specific ordering suffix against the manufacturer's current documentation to ensure correct package version and testing configuration. Confirm RoHS compliance status and ESD handling requirements prior to assembly. Cross-reference pin assignments with the latest SOT1258-1 outline drawing to prevent installation errors during PCB mounting.

Selection Notes

Select this component for designs requiring high linearity and efficiency in wideband Doherty topologies. Ensure the thermal management system can handle the junction-to-case thermal resistance values specified under maximum power conditions. Verify that the gate-source voltage limits accommodate the intended biasing scheme without exceeding absolute maximum ratings.

Part Context

This part belongs to Ampleon's portfolio of LDMOS power transistors engineered for telecommunications infrastructure. It utilizes lateral DMOS technology to deliver high power density in a compact surface-mount form factor. The product series targets modern digital modulation schemes requiring low memory effects and robust performance under varying load impedances.

Replacement Considerations

Consult official Ampleon documentation for verified substitute part numbers. Do not assume functional equivalence with other models in the BLC or BLF series without validating pinout compatibility, impedance matching networks, and thermal characteristics.