BLC9G20LS-470AVTZ

BLC9G20LS-470AVTZ

$81.85
  • Description:RF MOSFET LDMOS 28V DFM6
  • Series:-

SKU:869076b8bb9f Category: Brand:

  
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Product Detailed Parameters

  • Description:RF MOSFET LDMOS 28V DFM6
  • Series:-
  • Mfr:Ampleon USA Inc.
  • Package:Bulk,Tray
  • Technology:LDMOS
  • Frequency:1.81GHz ~ 1.88GHz
  • Gain:15.7dB
  • Voltage - Test:28 V
  • Current Rating (Amps):-
  • Noise Figure:-
  • Current - Test:400 mA
  • Power - Output:470W
  • Voltage - Rated:65 V
  • Grade:-
  • Qualification:-
  • Mounting Type:Chassis Mount
  • Package / Case:SOT-1258-3
  • Supplier Device Package:DFM6
  • Configuration:Dual, Common Source

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BLC9G20LS-470AVTZ

Overview

The BLC9G20LS-470AVTZ is a 470 W LDMOS asymmetric Doherty power transistor designed for base station applications in the 1805 MHz to 1990 MHz frequency range. It features an air cavity plastic earless flanged package (SOT1258-1) with six leads. The device operates at a drain-source voltage of 28 V and delivers peak output power up to 425 W under pulsed conditions. Typical performance includes a power gain of 15.7 dB and drain efficiency of 47.5% at 80 W average output power using 1-carrier W-CDMA signals.

Feature Summary

  • Asymmetric design optimized for high efficiency across broadband operation
  • Low thermal resistance ensuring excellent thermal stability
  • Internally matched structure for simplified circuit integration
  • Integrated ESD protection compliant with C2A and HBM Class 2 standards

Applications

  • RF power amplifiers for base stations
  • Multi-carrier applications in the 1805 MHz to 1990 MHz range
  • Asymmetrical Doherty amplifier architectures

Procurement Notes

Verify component authenticity through authorized Ampleon distribution channels. Confirm RoHS compliance status and check for moisture sensitivity handling requirements prior to assembly. Ensure proper electrostatic discharge precautions are implemented during storage and installation to maintain device integrity.

Selection Notes

Select this component for designs requiring high linearity and efficiency in Doherty configurations. Verify impedance matching networks against the provided load-pull data tables for both main and peak devices. Ensure thermal management solutions can handle the specified junction-to-case thermal resistance values under continuous operating conditions.

Part Context

This part belongs to the BLC9G20 series of LDMOS transistors manufactured by Ampleon. It is specifically engineered for cellular infrastructure, offering ruggedness against load mismatches up to 10:1 VSWR. The device utilizes advanced packaging technology to support high-power density requirements in modern wireless communication systems.

Replacement Considerations

Consult official Ampleon documentation for verified substitute part numbers. Cross-referencing should be limited to components explicitly listed as compatible replacements within manufacturer guidelines.

BLC9G20LS-470AVTZBLC9G20LS-470AVTZ
$81.85
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