BLC9G20XS-160AVY

BLC9G20XS-160AVY

  • Description:RF MOSFET LDMOS 30V SOT1275-3
  • Series:-

SKU:d5a11c1722ee Category: Brand:

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Product Detailed Parameters

  • Description:RF MOSFET LDMOS 30V SOT1275-3
  • Series:-
  • Mfr:Ampleon USA Inc.
  • Package:Tape & Reel (TR)
  • Technology:LDMOS
  • Frequency:1.805GHz ~ 1.99GHz
  • Gain:16.6dB
  • Voltage - Test:30 V
  • Current Rating (Amps):1.4µA
  • Noise Figure:-
  • Current - Test:300 mA
  • Power - Output:190W
  • Voltage - Rated:65 V
  • Grade:-
  • Qualification:-
  • Mounting Type:-
  • Package / Case:SOT1275-3
  • Supplier Device Package:SOT1275-3
  • Configuration:-

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BLC9G20XS-160AVY

Overview

The BLC9G20XS-160AV is a 160 W LDMOS asymmetric Doherty power transistor designed for base station applications in the 1805 MHz to 1990 MHz frequency range. It features an air cavity plastic earless flanged package (SOT1275-1) with six leads and integrated ESD protection. The device operates at a drain-source voltage of 30 V, delivering typical power gain of 16.4 dB and drain efficiency of 46% under 1-carrier W-CDMA conditions. Peak output power reaches 190 W in pulsed CW operation. Thermal resistance from junction to case ranges from 0.22 K/W to 0.30 K/W depending on power levels.

Feature Summary

  • Asymmetric design optimized for high-efficiency Doherty amplifier configurations
  • Low thermal resistance ensuring excellent thermal stability
  • Internally matched structure for simplified circuit integration
  • Integrated electrostatic discharge protection

Applications

  • RF power amplifiers for cellular base stations
  • Multi-carrier applications within the 1805 MHz to 1990 MHz band
  • W-CDMA transmitter systems

Procurement Notes

Verify component authenticity through authorized Ampleon distribution channels or certified suppliers. Confirm that the SOT1275-1 package matches the required footprint and pin configuration for the target PCB layout. Ensure handling procedures comply with CDM Class C2A and HBM Class 2 ESD sensitivity standards to prevent damage during assembly.

Selection Notes

Select this component when designing asymmetric Doherty architectures requiring high linearity and efficiency in the 1805 MHz to 1990 MHz spectrum. Evaluate impedance matching networks against the provided load-pull data for both main and peak devices. Consider the low memory effects for digital pre-distortion compatibility and verify thermal management capabilities against the specified junction-to-case resistance values.

Part Context

This part belongs to Ampleon's portfolio of LDMOS power transistors engineered for wireless infrastructure. It specifically targets the UMTS/IMT-2000 bands, providing a solution for modern multi-carrier base station deployments where spectral efficiency and power consumption are critical constraints.

Replacement Considerations

Publicly confirmed substitute part numbers are not available in the source documentation.

BLC9G20XS-160AVYBLC9G20XS-160AVY

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