BLC9G20XS-400AVTY

Overview

The BLC9G20XS-400AVTY is a 400 W LDMOS asymmetric Doherty power transistor designed for base station applications in the 1805 MHz to 1880 MHz and 1930 MHz to 1995 MHz frequency ranges. It features a dual N-channel configuration with a drain-source breakdown voltage of 65 V. Typical performance at Tcase = 25 °C includes a power gain of 16.2 dB, drain efficiency of 45%, and an adjacent channel power ratio of -39 dBc under 1-carrier W-CDMA conditions. The device utilizes an SOT1258-4 air cavity plastic earless flanged package.

Feature Summary

• Excellent ruggedness capable of withstanding high load mismatch
• Low thermal resistance providing excellent thermal stability
• Lower output capacitance for improved Doherty application performance
• Designed for low memory effects supporting digital pre-distortion

Applications

• RF power amplifiers for base stations
• Multi-carrier applications in the 1805 MHz to 1880 MHz range
• Multi-carrier applications in the 1930 MHz to 1995 MHz range

Procurement Notes

Verify component authenticity by checking the manufacturer's marking against official datasheet specifications. Confirm the package type matches the SOT1258-4 outline. Ensure handling procedures comply with ESD sensitivity standards, specifically CDM Class C2A and HBM Class 2 ratings, to prevent damage during assembly.

Selection Notes

Select this component for asymmetric Doherty amplifier designs requiring high efficiency and linearity in cellular infrastructure. Verify that the design accommodates the specific impedance requirements for main and peak devices across the target frequency bands. Ensure the cooling solution maintains the case temperature within the specified operating range to guarantee reliability.

Part Context

This part belongs to Ampleon's portfolio of RF power transistors utilizing LDMOS technology. It is specifically engineered for modern wireless communication systems, offering a balance of high power output and efficiency. The device supports complex modulation schemes common in 3GPP standards through its linear characteristics.

Replacement Considerations

Publicly confirmed substitute part numbers are not available in the provided documentation. Designers should consult official Ampleon resources or authorized distributors for current equivalent recommendations based on specific circuit requirements.

FAQ

What is the maximum drain-source voltage rating?

The absolute maximum drain-source voltage (VDS) is rated at 65 V.

How does the device handle load mismatches?

It can withstand a load mismatch corresponding to a VSWR of 10:1 through all phases under specified operating conditions.

What is the typical power gain at 1807.5 MHz?

The typical power gain (Gp) is 16.2 dB when delivering 87 W of average output power under 1-carrier W-CDMA test conditions.