BLC9G21LS-60AVY

Overview

The BLC9G21LS-60AVY is a dual N-channel LDMOS power transistor designed for asymmetric Doherty base station applications in the 1805 MHz to 2200 MHz frequency range. It delivers a peak output power of 60 W and operates with a drain-source voltage up to 65 V. The device features an internal gate-source threshold voltage of 2.5 V, forward transconductance reaching 2.2 S for the peak device, and a maximum junction temperature rating of +225 °C. Packaged in the SOT1275-1 air cavity plastic earless flanged format, it provides low thermal resistance and integrated ESD protection.

Feature Summary

• Asymmetric design optimized for high efficiency across the operating band
• Low output capacitance to enhance performance in Doherty configurations
• Internally matched structure for simplified circuit integration
• Integrated electrostatic discharge (ESD) protection

Applications

• RF power amplifiers for base stations
• Multi-carrier applications in the 1805 MHz to 2200 MHz range
• Asymmetric Doherty amplifier architectures

Procurement Notes

Verify the specific suffix 'Y' against official Ampleon documentation to confirm reel packaging specifications. Ensure compliance with Directive 2002/95/EC regarding hazardous substances is documented for your supply chain requirements. Confirm that the SOT1275-1 package dimensions align with your PCB footprint constraints before finalizing orders.

Selection Notes

Select this component when designing asymmetric Doherty amplifiers requiring high linearity and ruggedness in the 1805 MHz to 2200 MHz spectrum. The device's low memory effects support effective digital pre-distortion. Verify that the application can accommodate the required thermal management for a maximum junction temperature of +225 °C and ensure the load impedance matches the recommended values for optimal gain and efficiency.

Part Context

This part belongs to the BLC9G21LS series of LDMOS transistors manufactured by Ampleon. It is specifically engineered as a power transistor for telecommunications infrastructure. The device utilizes advanced LDMOS technology to provide high power density and reliability in demanding RF environments.

Replacement Considerations

Consult official Ampleon substitution guides for verified replacements. Cross-reference pinouts, thermal characteristics, and electrical limits carefully if considering alternative manufacturers.

FAQ

What is the maximum junction temperature for the BLC9G21LS-60AV?

The maximum junction temperature is rated at +225 °C.

Does the BLC9G21LS-60AV include internal matching?

Yes, the device is internally matched to facilitate ease of use in amplifier designs.

What is the typical forward transconductance for the peak device?

The typical forward transconductance for the peak device is 2.2 S at VDS = 10 V and ID = 1.5 A.